JPH0465552B2 - - Google Patents
Info
- Publication number
- JPH0465552B2 JPH0465552B2 JP58113295A JP11329583A JPH0465552B2 JP H0465552 B2 JPH0465552 B2 JP H0465552B2 JP 58113295 A JP58113295 A JP 58113295A JP 11329583 A JP11329583 A JP 11329583A JP H0465552 B2 JPH0465552 B2 JP H0465552B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- resistance
- drain region
- exposed
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58113295A JPS605568A (ja) | 1983-06-23 | 1983-06-23 | 縦型絶縁ゲ−ト電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58113295A JPS605568A (ja) | 1983-06-23 | 1983-06-23 | 縦型絶縁ゲ−ト電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS605568A JPS605568A (ja) | 1985-01-12 |
| JPH0465552B2 true JPH0465552B2 (en, 2012) | 1992-10-20 |
Family
ID=14608573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58113295A Granted JPS605568A (ja) | 1983-06-23 | 1983-06-23 | 縦型絶縁ゲ−ト電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605568A (en, 2012) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0199293B2 (en) * | 1985-04-24 | 1995-08-30 | General Electric Company | Insulated gate semiconductor device |
| DE3628857A1 (de) * | 1985-08-27 | 1987-03-12 | Mitsubishi Electric Corp | Halbleitereinrichtung |
| JPS62109365A (ja) * | 1985-11-07 | 1987-05-20 | Fuji Electric Co Ltd | 半導体装置 |
| JPS62282465A (ja) * | 1986-03-05 | 1987-12-08 | イクシス・コーポレーション | モノリシツク半導体デバイスおよびその製造方法 |
| JP2513640B2 (ja) * | 1986-09-17 | 1996-07-03 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| JP2557367B2 (ja) * | 1987-02-26 | 1996-11-27 | 株式会社東芝 | 絶縁ゲ−ト型自己タ−ンオフサイリスタ |
| JP2679074B2 (ja) * | 1988-01-27 | 1997-11-19 | 富士電機株式会社 | 電界効果トランジスタ |
| JP2864629B2 (ja) * | 1990-03-05 | 1999-03-03 | 富士電機株式会社 | 伝導度変調型ｍｏｓｆｅｔ |
| JP2001077354A (ja) | 1999-08-31 | 2001-03-23 | Miyazaki Oki Electric Co Ltd | 縦型絶縁ゲート半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE8107136L (sv) * | 1980-12-02 | 1982-06-03 | Gen Electric | Styrelektrodforsedd likriktaranordning |
| JPS594077A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 電界効果トランジスタ |
-
1983
- 1983-06-23 JP JP58113295A patent/JPS605568A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS605568A (ja) | 1985-01-12 |
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