JPH0465552B2 - - Google Patents

Info

Publication number
JPH0465552B2
JPH0465552B2 JP58113295A JP11329583A JPH0465552B2 JP H0465552 B2 JPH0465552 B2 JP H0465552B2 JP 58113295 A JP58113295 A JP 58113295A JP 11329583 A JP11329583 A JP 11329583A JP H0465552 B2 JPH0465552 B2 JP H0465552B2
Authority
JP
Japan
Prior art keywords
region
resistance
drain region
exposed
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58113295A
Other languages
English (en)
Japanese (ja)
Other versions
JPS605568A (ja
Inventor
Masahiro Ogino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP58113295A priority Critical patent/JPS605568A/ja
Publication of JPS605568A publication Critical patent/JPS605568A/ja
Publication of JPH0465552B2 publication Critical patent/JPH0465552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
JP58113295A 1983-06-23 1983-06-23 縦型絶縁ゲ−ト電界効果トランジスタ Granted JPS605568A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58113295A JPS605568A (ja) 1983-06-23 1983-06-23 縦型絶縁ゲ−ト電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58113295A JPS605568A (ja) 1983-06-23 1983-06-23 縦型絶縁ゲ−ト電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS605568A JPS605568A (ja) 1985-01-12
JPH0465552B2 true JPH0465552B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-20

Family

ID=14608573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58113295A Granted JPS605568A (ja) 1983-06-23 1983-06-23 縦型絶縁ゲ−ト電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS605568A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0199293B2 (en) * 1985-04-24 1995-08-30 General Electric Company Insulated gate semiconductor device
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
JPS62109365A (ja) * 1985-11-07 1987-05-20 Fuji Electric Co Ltd 半導体装置
JPS62282465A (ja) * 1986-03-05 1987-12-08 イクシス・コーポレーション モノリシツク半導体デバイスおよびその製造方法
JP2513640B2 (ja) * 1986-09-17 1996-07-03 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JP2557367B2 (ja) * 1987-02-26 1996-11-27 株式会社東芝 絶縁ゲ−ト型自己タ−ンオフサイリスタ
JP2679074B2 (ja) * 1988-01-27 1997-11-19 富士電機株式会社 電界効果トランジスタ
JP2864629B2 (ja) * 1990-03-05 1999-03-03 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
JP2001077354A (ja) 1999-08-31 2001-03-23 Miyazaki Oki Electric Co Ltd 縦型絶縁ゲート半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning
JPS594077A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 電界効果トランジスタ

Also Published As

Publication number Publication date
JPS605568A (ja) 1985-01-12

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