JPH0464455B2 - - Google Patents

Info

Publication number
JPH0464455B2
JPH0464455B2 JP59254364A JP25436484A JPH0464455B2 JP H0464455 B2 JPH0464455 B2 JP H0464455B2 JP 59254364 A JP59254364 A JP 59254364A JP 25436484 A JP25436484 A JP 25436484A JP H0464455 B2 JPH0464455 B2 JP H0464455B2
Authority
JP
Japan
Prior art keywords
layer
amorphous
gaas
crystal
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59254364A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61131526A (ja
Inventor
Junji Saito
Akihiro Shibatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP25436484A priority Critical patent/JPS61131526A/ja
Publication of JPS61131526A publication Critical patent/JPS61131526A/ja
Publication of JPH0464455B2 publication Critical patent/JPH0464455B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP25436484A 1984-11-30 1984-11-30 半導体装置の製造方法 Granted JPS61131526A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25436484A JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25436484A JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61131526A JPS61131526A (ja) 1986-06-19
JPH0464455B2 true JPH0464455B2 (enrdf_load_stackoverflow) 1992-10-15

Family

ID=17263958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25436484A Granted JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61131526A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0746684B2 (ja) * 1985-03-07 1995-05-17 日本電気株式会社 半導体ウェーハとその製造方法
JPH0810674B2 (ja) * 1987-11-09 1996-01-31 株式会社日立製作所 化合物半導体基板及びその製造方法
JP2894801B2 (ja) * 1990-06-29 1999-05-24 日本電気株式会社 半導体トランジスタおよびその製造方法
JPH0661269A (ja) * 1992-08-11 1994-03-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2738379B2 (ja) * 1996-02-20 1998-04-08 日本電気株式会社 半導体装置の製造方法
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
JP2011171595A (ja) * 2010-02-19 2011-09-01 Fujitsu Ltd 化合物半導体装置の製造方法及び化合物半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528672A (en) * 1975-07-09 1977-01-22 Jidosha Seiki Kogyo Kk Car washing device
JPS5919375B2 (ja) * 1977-10-07 1984-05-04 株式会社日立製作所 デ−タバッフア制御方式
JPS5769784A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Manufacture of semiconductor light emitting device
JPS59116192A (ja) * 1982-12-21 1984-07-04 Fujitsu Ltd 分子線結晶成長方法

Also Published As

Publication number Publication date
JPS61131526A (ja) 1986-06-19

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term