JPS61131526A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61131526A
JPS61131526A JP25436484A JP25436484A JPS61131526A JP S61131526 A JPS61131526 A JP S61131526A JP 25436484 A JP25436484 A JP 25436484A JP 25436484 A JP25436484 A JP 25436484A JP S61131526 A JPS61131526 A JP S61131526A
Authority
JP
Japan
Prior art keywords
layer
amorphous
substrate
gaaz
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25436484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464455B2 (enrdf_load_stackoverflow
Inventor
Junji Saito
斎藤　淳二
Akihiro Shibatomi
昭洋 柴富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP25436484A priority Critical patent/JPS61131526A/ja
Publication of JPS61131526A publication Critical patent/JPS61131526A/ja
Publication of JPH0464455B2 publication Critical patent/JPH0464455B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
JP25436484A 1984-11-30 1984-11-30 半導体装置の製造方法 Granted JPS61131526A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25436484A JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25436484A JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61131526A true JPS61131526A (ja) 1986-06-19
JPH0464455B2 JPH0464455B2 (enrdf_load_stackoverflow) 1992-10-15

Family

ID=17263958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25436484A Granted JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61131526A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203630A (ja) * 1985-03-07 1986-09-09 Nec Corp 半導体ウェーハとその製造方法
JPH01123410A (ja) * 1987-11-09 1989-05-16 Hitachi Ltd 化合物半導体基板及びその製造方法
JPH0461383A (ja) * 1990-06-29 1992-02-27 Nec Corp 半導体装置およびその製造方法
US5483089A (en) * 1992-08-11 1996-01-09 Mitsubishi Denki Kabushiki Kaisha Electrically isolated MESFET
US5786261A (en) * 1996-02-20 1998-07-28 Nec Corporation Method for fabricating semiconductor device having device isolation layer
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
JP2011171595A (ja) * 2010-02-19 2011-09-01 Fujitsu Ltd 化合物半導体装置の製造方法及び化合物半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528672A (en) * 1975-07-09 1977-01-22 Jidosha Seiki Kogyo Kk Car washing device
JPS55901A (en) * 1977-10-07 1980-01-07 Hitachi Ltd Data buffer control system
JPS5769784A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Manufacture of semiconductor light emitting device
JPS59116192A (ja) * 1982-12-21 1984-07-04 Fujitsu Ltd 分子線結晶成長方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528672A (en) * 1975-07-09 1977-01-22 Jidosha Seiki Kogyo Kk Car washing device
JPS55901A (en) * 1977-10-07 1980-01-07 Hitachi Ltd Data buffer control system
JPS5769784A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Manufacture of semiconductor light emitting device
JPS59116192A (ja) * 1982-12-21 1984-07-04 Fujitsu Ltd 分子線結晶成長方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203630A (ja) * 1985-03-07 1986-09-09 Nec Corp 半導体ウェーハとその製造方法
JPH01123410A (ja) * 1987-11-09 1989-05-16 Hitachi Ltd 化合物半導体基板及びその製造方法
JPH0461383A (ja) * 1990-06-29 1992-02-27 Nec Corp 半導体装置およびその製造方法
US5483089A (en) * 1992-08-11 1996-01-09 Mitsubishi Denki Kabushiki Kaisha Electrically isolated MESFET
US5786261A (en) * 1996-02-20 1998-07-28 Nec Corporation Method for fabricating semiconductor device having device isolation layer
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
JP2011171595A (ja) * 2010-02-19 2011-09-01 Fujitsu Ltd 化合物半導体装置の製造方法及び化合物半導体装置

Also Published As

Publication number Publication date
JPH0464455B2 (enrdf_load_stackoverflow) 1992-10-15

Similar Documents

Publication Publication Date Title
EP0073509B1 (en) Semiconductor integrated circuit device
US4500388A (en) Method for forming monocrystalline semiconductor film on insulating film
JPH0656887B2 (ja) 半導体装置およびその製法
JPH0473619B2 (enrdf_load_stackoverflow)
JPH04335538A (ja) 半導体装置およびその製造方法
JPS62177909A (ja) 半導体装置の製造方法
JPS61131526A (ja) 半導体装置の製造方法
JPH02252267A (ja) 半導体装置の製造方法
JP2793837B2 (ja) 半導体装置の製造方法およびヘテロ接合バイポーラトランジスタ
JPS59188978A (ja) シヨツトキゲ−ト型ｆｅｔの製造方法
JP2707654B2 (ja) 薄膜トランジスタの製造方法
JP2687393B2 (ja) 半導体装置の製造方法
US5786261A (en) Method for fabricating semiconductor device having device isolation layer
JPS61276261A (ja) 高速バイポ−ラトランジスタの製造方法
JP2505764B2 (ja) 単結晶半導体薄膜の形成方法
JPH04373171A (ja) 半導体素子の作製方法
JPS587071B2 (ja) 半導体装置の製造方法
JPS61198770A (ja) 化合物半導体装置の製法
JPH01187873A (ja) 半導体装置の製造方法
JPS58121642A (ja) 半導体装置の製造方法
US20110227129A1 (en) Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
JPS5934626A (ja) 半導体膜形成方法
JPS58176930A (ja) 半導体装置の製造方法
JPH0422329B2 (enrdf_load_stackoverflow)
JPH0322526A (ja) 炭化珪素半導体装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term