JPH0462175B2 - - Google Patents
Info
- Publication number
- JPH0462175B2 JPH0462175B2 JP57152295A JP15229582A JPH0462175B2 JP H0462175 B2 JPH0462175 B2 JP H0462175B2 JP 57152295 A JP57152295 A JP 57152295A JP 15229582 A JP15229582 A JP 15229582A JP H0462175 B2 JPH0462175 B2 JP H0462175B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor substrate
- conductivity type
- source
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/343—Gate regions of field-effect devices having PN junction gates
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57152295A JPS5941871A (ja) | 1982-08-31 | 1982-08-31 | 接合型電界効果半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57152295A JPS5941871A (ja) | 1982-08-31 | 1982-08-31 | 接合型電界効果半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5941871A JPS5941871A (ja) | 1984-03-08 |
| JPH0462175B2 true JPH0462175B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-10-05 |
Family
ID=15537400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57152295A Granted JPS5941871A (ja) | 1982-08-31 | 1982-08-31 | 接合型電界効果半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5941871A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4805003A (en) * | 1987-11-10 | 1989-02-14 | Motorola Inc. | GaAs MESFET |
| JP2538984B2 (ja) * | 1988-04-20 | 1996-10-02 | 株式会社豊田自動織機製作所 | 静電誘導形半導体装置 |
| DE19548443A1 (de) * | 1995-12-22 | 1997-06-26 | Siemens Ag | Halbleiteranordnung zur Strombegrenzung |
| DE19726678A1 (de) * | 1997-06-24 | 1999-01-07 | Siemens Ag | Passiver Halbleiterstrombegrenzer |
| US6281521B1 (en) * | 1998-07-09 | 2001-08-28 | Cree Research Inc. | Silicon carbide horizontal channel buffered gate semiconductor devices |
| JP4848595B2 (ja) * | 2001-05-16 | 2011-12-28 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
| JP4696444B2 (ja) | 2003-11-14 | 2011-06-08 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
| KR101866673B1 (ko) * | 2013-12-25 | 2018-06-11 | 캐논 가부시끼가이샤 | 촬상 장치, 촬상 시스템 및 촬상 장치의 제조 방법 |
-
1982
- 1982-08-31 JP JP57152295A patent/JPS5941871A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5941871A (ja) | 1984-03-08 |