JPH0461492B2 - - Google Patents

Info

Publication number
JPH0461492B2
JPH0461492B2 JP60103494A JP10349485A JPH0461492B2 JP H0461492 B2 JPH0461492 B2 JP H0461492B2 JP 60103494 A JP60103494 A JP 60103494A JP 10349485 A JP10349485 A JP 10349485A JP H0461492 B2 JPH0461492 B2 JP H0461492B2
Authority
JP
Japan
Prior art keywords
resist
substrate
forming
patterned layer
steps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60103494A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61263131A (ja
Inventor
Naoki Kato
Takashi Makimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60103494A priority Critical patent/JPS61263131A/ja
Publication of JPS61263131A publication Critical patent/JPS61263131A/ja
Publication of JPH0461492B2 publication Critical patent/JPH0461492B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60103494A 1985-05-15 1985-05-15 微細パタ−ン化層形成方法 Granted JPS61263131A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60103494A JPS61263131A (ja) 1985-05-15 1985-05-15 微細パタ−ン化層形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60103494A JPS61263131A (ja) 1985-05-15 1985-05-15 微細パタ−ン化層形成方法

Publications (2)

Publication Number Publication Date
JPS61263131A JPS61263131A (ja) 1986-11-21
JPH0461492B2 true JPH0461492B2 (en, 2012) 1992-10-01

Family

ID=14355544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60103494A Granted JPS61263131A (ja) 1985-05-15 1985-05-15 微細パタ−ン化層形成方法

Country Status (1)

Country Link
JP (1) JPS61263131A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8921236B1 (en) * 2013-06-21 2014-12-30 Eastman Kodak Company Patterning for selective area deposition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687343A (en) * 1979-12-17 1981-07-15 Sony Corp Forming method of wiring
JPS58156469A (ja) * 1982-03-09 1983-09-17 Kobe Steel Ltd 自動車用ドア開装置
US4417948A (en) * 1982-07-09 1983-11-29 International Business Machines Corporation Self developing, photoetching of polyesters by far UV radiation

Also Published As

Publication number Publication date
JPS61263131A (ja) 1986-11-21

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