JPH0313583B2 - - Google Patents
Info
- Publication number
- JPH0313583B2 JPH0313583B2 JP55086847A JP8684780A JPH0313583B2 JP H0313583 B2 JPH0313583 B2 JP H0313583B2 JP 55086847 A JP55086847 A JP 55086847A JP 8684780 A JP8684780 A JP 8684780A JP H0313583 B2 JPH0313583 B2 JP H0313583B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- resist
- resist film
- irradiation
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8684780A JPS5711344A (en) | 1980-06-25 | 1980-06-25 | Dry developing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8684780A JPS5711344A (en) | 1980-06-25 | 1980-06-25 | Dry developing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5711344A JPS5711344A (en) | 1982-01-21 |
JPH0313583B2 true JPH0313583B2 (en, 2012) | 1991-02-22 |
Family
ID=13898198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8684780A Granted JPS5711344A (en) | 1980-06-25 | 1980-06-25 | Dry developing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5711344A (en, 2012) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60211939A (ja) * | 1984-04-06 | 1985-10-24 | Nippon Telegr & Teleph Corp <Ntt> | 微細パタン形成法 |
JP2594926B2 (ja) * | 1987-02-20 | 1997-03-26 | 株式会社日立製作所 | パタン形成法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS509549A (en, 2012) * | 1973-05-30 | 1975-01-31 | ||
JPS5272175A (en) * | 1975-12-12 | 1977-06-16 | Mitsubishi Electric Corp | Mask patterning of resist meterial |
JPS5427369A (en) * | 1977-08-01 | 1979-03-01 | Hitachi Ltd | Pattern formation method |
JPS5449072A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Developing method for resist film |
JPS5460571A (en) * | 1977-10-24 | 1979-05-16 | Cho Lsi Gijutsu Kenkyu Kumiai | Dry developing and etching method |
JPS5569265A (en) * | 1978-11-15 | 1980-05-24 | Hitachi Ltd | Pattern-forming method |
-
1980
- 1980-06-25 JP JP8684780A patent/JPS5711344A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5711344A (en) | 1982-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0021719A2 (en) | Method for producing negative resist images, and resist images | |
JP3081655B2 (ja) | レジストパターンの形成方法 | |
JPH0313583B2 (en, 2012) | ||
JPS6399526A (ja) | 電子ビーム近接効果補償方法 | |
JPH0241740B2 (en, 2012) | ||
JPS5633827A (en) | Photo etching method including surface treatment of substrate | |
JPH04176123A (ja) | 半導体装置の製造方法 | |
JPH04348030A (ja) | 傾斜エッチング法 | |
JPS6137774B2 (en, 2012) | ||
JPS6213813B2 (en, 2012) | ||
JPS6054775B2 (ja) | ドライ現像方法 | |
JP2604573B2 (ja) | 微細パターン形成方法 | |
JPS59141228A (ja) | 微細パタ−ン形成方法 | |
JPH0219852A (ja) | レジスト処理方法 | |
JP2783154B2 (ja) | レジストパターンの形成方法 | |
JPS6386434A (ja) | レジストパタ−ン形成方法 | |
JPS6155663B2 (en, 2012) | ||
JPH01137634A (ja) | 半導体装置の製造方法 | |
JPH03188447A (ja) | レジストパターンの形成方法 | |
JPH0461492B2 (en, 2012) | ||
JPS634700B2 (en, 2012) | ||
JPH036566A (ja) | エキシマレーザによるパターン形成方法 | |
JPS61141133A (ja) | 微細パタ−ン形成法 | |
JPS6354726A (ja) | レジスト膜のエツチング方法 | |
JPS60106132A (ja) | パタ−ン形成方法 |