JPH0458170B2 - - Google Patents
Info
- Publication number
- JPH0458170B2 JPH0458170B2 JP58239295A JP23929583A JPH0458170B2 JP H0458170 B2 JPH0458170 B2 JP H0458170B2 JP 58239295 A JP58239295 A JP 58239295A JP 23929583 A JP23929583 A JP 23929583A JP H0458170 B2 JPH0458170 B2 JP H0458170B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- resist film
- ultraviolet rays
- pattern
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58239295A JPS60130828A (ja) | 1983-12-19 | 1983-12-19 | レジストパタ−ンの形成方法 |
US06/594,481 US4609615A (en) | 1983-03-31 | 1984-03-27 | Process for forming pattern with negative resist using quinone diazide compound |
DE8484302145T DE3466741D1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
EP84302145A EP0124265B1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
CA000450963A CA1214679A (en) | 1983-03-31 | 1984-03-30 | Process for forming pattern with negative resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58239295A JPS60130828A (ja) | 1983-12-19 | 1983-12-19 | レジストパタ−ンの形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60130828A JPS60130828A (ja) | 1985-07-12 |
JPH0458170B2 true JPH0458170B2 (en, 2012) | 1992-09-16 |
Family
ID=17042603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58239295A Granted JPS60130828A (ja) | 1983-03-31 | 1983-12-19 | レジストパタ−ンの形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60130828A (en, 2012) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1285418C (en) * | 1985-07-18 | 1991-07-02 | Robert A. Owens | Pre-exposure method for increased sensitivity in high contrast resist development |
JPH0812840B2 (ja) * | 1986-06-16 | 1996-02-07 | ウシオ電機株式会社 | レジスト処理方法 |
JP2768670B2 (ja) * | 1987-02-13 | 1998-06-25 | 株式会社東芝 | パターン形成方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6029936B2 (ja) * | 1979-12-27 | 1985-07-13 | 富士通株式会社 | パタ−ン形成法 |
JPS56140345A (en) * | 1980-04-02 | 1981-11-02 | Hitachi Ltd | Formation of pattern |
JPS57153435A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacture of semiconductor device |
-
1983
- 1983-12-19 JP JP58239295A patent/JPS60130828A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60130828A (ja) | 1985-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |