JPH0458691B2 - - Google Patents

Info

Publication number
JPH0458691B2
JPH0458691B2 JP58249981A JP24998183A JPH0458691B2 JP H0458691 B2 JPH0458691 B2 JP H0458691B2 JP 58249981 A JP58249981 A JP 58249981A JP 24998183 A JP24998183 A JP 24998183A JP H0458691 B2 JPH0458691 B2 JP H0458691B2
Authority
JP
Japan
Prior art keywords
silicon carbide
single crystal
carbide single
crystal film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58249981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60140756A (ja
Inventor
Akira Suzuki
Masaki Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58249981A priority Critical patent/JPS60140756A/ja
Priority to US06/683,801 priority patent/US4762806A/en
Priority to DE19843446961 priority patent/DE3446961A1/de
Publication of JPS60140756A publication Critical patent/JPS60140756A/ja
Priority to US07/172,501 priority patent/US4966860A/en
Publication of JPH0458691B2 publication Critical patent/JPH0458691B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
JP58249981A 1983-12-23 1983-12-27 炭化珪素バイポ−ラトランジスタの製造方法 Granted JPS60140756A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58249981A JPS60140756A (ja) 1983-12-27 1983-12-27 炭化珪素バイポ−ラトランジスタの製造方法
US06/683,801 US4762806A (en) 1983-12-23 1984-12-19 Process for producing a SiC semiconductor device
DE19843446961 DE3446961A1 (de) 1983-12-23 1984-12-21 Verfahren zur herstellung einer sic-halbleitervorrichtung
US07/172,501 US4966860A (en) 1983-12-23 1988-03-24 Process for producing a SiC semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58249981A JPS60140756A (ja) 1983-12-27 1983-12-27 炭化珪素バイポ−ラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60140756A JPS60140756A (ja) 1985-07-25
JPH0458691B2 true JPH0458691B2 (en, 2012) 1992-09-18

Family

ID=17201055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58249981A Granted JPS60140756A (ja) 1983-12-23 1983-12-27 炭化珪素バイポ−ラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS60140756A (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651542B2 (ja) * 1987-01-30 1997-09-10 日本電信電話株式会社 バイポーラ型トランジスタ
JP4777699B2 (ja) * 2005-06-13 2011-09-21 本田技研工業株式会社 バイポーラ型半導体装置およびその製造方法
JP6553336B2 (ja) * 2014-07-28 2019-07-31 エア・ウォーター株式会社 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
JPS55104999A (en) * 1979-01-29 1980-08-11 Sharp Corp Production of silicon carbide crystal layer

Also Published As

Publication number Publication date
JPS60140756A (ja) 1985-07-25

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