JPH0456466B2 - - Google Patents
Info
- Publication number
- JPH0456466B2 JPH0456466B2 JP56169998A JP16999881A JPH0456466B2 JP H0456466 B2 JPH0456466 B2 JP H0456466B2 JP 56169998 A JP56169998 A JP 56169998A JP 16999881 A JP16999881 A JP 16999881A JP H0456466 B2 JPH0456466 B2 JP H0456466B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- output
- type
- field effect
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 108091006146 Channels Proteins 0.000 claims description 20
- 230000005669 field effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000872 buffer Substances 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000003321 amplification Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11898—Input and output buffer/driver structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169998A JPS5871650A (ja) | 1981-10-26 | 1981-10-26 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169998A JPS5871650A (ja) | 1981-10-26 | 1981-10-26 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5871650A JPS5871650A (ja) | 1983-04-28 |
| JPH0456466B2 true JPH0456466B2 (ko) | 1992-09-08 |
Family
ID=15896687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56169998A Granted JPS5871650A (ja) | 1981-10-26 | 1981-10-26 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5871650A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6035532A (ja) * | 1983-07-29 | 1985-02-23 | Fujitsu Ltd | マスタスライス集積回路装置 |
| JPS61111576A (ja) * | 1984-10-13 | 1986-05-29 | Fujitsu Ltd | 半導体装置 |
| JP5557709B2 (ja) * | 2010-11-19 | 2014-07-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106279A (en) * | 1976-03-03 | 1977-09-06 | Oki Electric Ind Co Ltd | Manufacture of semiconductor ic |
| JPS5493376A (en) * | 1977-12-30 | 1979-07-24 | Fujitsu Ltd | Semiconductor integrated circuit device |
-
1981
- 1981-10-26 JP JP56169998A patent/JPS5871650A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106279A (en) * | 1976-03-03 | 1977-09-06 | Oki Electric Ind Co Ltd | Manufacture of semiconductor ic |
| JPS5493376A (en) * | 1977-12-30 | 1979-07-24 | Fujitsu Ltd | Semiconductor integrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5871650A (ja) | 1983-04-28 |
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