JPH0456466B2 - - Google Patents

Info

Publication number
JPH0456466B2
JPH0456466B2 JP56169998A JP16999881A JPH0456466B2 JP H0456466 B2 JPH0456466 B2 JP H0456466B2 JP 56169998 A JP56169998 A JP 56169998A JP 16999881 A JP16999881 A JP 16999881A JP H0456466 B2 JPH0456466 B2 JP H0456466B2
Authority
JP
Japan
Prior art keywords
circuit
output
type
field effect
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56169998A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5871650A (ja
Inventor
Masao Mizukami
Koji Masuda
Yoshikazu Takahashi
Katsuji Horiguchi
Hiroshi Yoshimura
Ryota Kasai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
NTT Inc
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP56169998A priority Critical patent/JPS5871650A/ja
Publication of JPS5871650A publication Critical patent/JPS5871650A/ja
Publication of JPH0456466B2 publication Critical patent/JPH0456466B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/998Input and output buffer/driver structures

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56169998A 1981-10-26 1981-10-26 半導体集積回路装置 Granted JPS5871650A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56169998A JPS5871650A (ja) 1981-10-26 1981-10-26 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56169998A JPS5871650A (ja) 1981-10-26 1981-10-26 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5871650A JPS5871650A (ja) 1983-04-28
JPH0456466B2 true JPH0456466B2 (enExample) 1992-09-08

Family

ID=15896687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56169998A Granted JPS5871650A (ja) 1981-10-26 1981-10-26 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5871650A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035532A (ja) * 1983-07-29 1985-02-23 Fujitsu Ltd マスタスライス集積回路装置
JPS61111576A (ja) * 1984-10-13 1986-05-29 Fujitsu Ltd 半導体装置
JP5557709B2 (ja) * 2010-11-19 2014-07-23 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106279A (en) * 1976-03-03 1977-09-06 Oki Electric Ind Co Ltd Manufacture of semiconductor ic
JPS5493376A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS5871650A (ja) 1983-04-28

Similar Documents

Publication Publication Date Title
US5218222A (en) Output ESD protection circuit
US5376816A (en) Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors
JP2821667B2 (ja) 集積回路チップ
JPH05335502A (ja) 半導体集積回路装置
JPH06177331A (ja) 出力バッファのesd保護
JP3074003B2 (ja) 半導体集積回路装置
KR100333519B1 (ko) 반도체집적회로장치
CN1319171C (zh) 具有改进的静电放电耐压的半导体装置
CN101257019B (zh) 沿着半导体芯片的长边具有细长静电保护元件的半导体器件
US4320409A (en) Complementary field-effect transistor integrated circuit device
JP4857353B2 (ja) 半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置
JPH09102551A (ja) 半導体装置
JPH1065146A (ja) 半導体集積回路装置
JPH0456466B2 (enExample)
JP4058234B2 (ja) 半導体装置
JP2602974B2 (ja) Cmos半導体集積回路装置
JPH10107235A (ja) ゲートアレーlsiの構成方法とこれを用いた回路装置
US6355960B1 (en) ESD protection for open drain I/O pad in integrated circuit with parasitic field FET devices
JP2508968B2 (ja) 半導体装置
KR100554328B1 (ko) 반도체 장치
JP3211871B2 (ja) 入出力保護回路
JPS58222573A (ja) 半導体集積回路装置
JPH0665224B2 (ja) 半導体集積回路装置
JPH0532908B2 (enExample)
KR19990066773A (ko) 정전 파괴 내성이 개선된 출력 회로를 포함하는 반도체 장치