JPH0454968B2 - - Google Patents
Info
- Publication number
- JPH0454968B2 JPH0454968B2 JP57108801A JP10880182A JPH0454968B2 JP H0454968 B2 JPH0454968 B2 JP H0454968B2 JP 57108801 A JP57108801 A JP 57108801A JP 10880182 A JP10880182 A JP 10880182A JP H0454968 B2 JPH0454968 B2 JP H0454968B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- organic layer
- end point
- pattern
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 41
- 239000012044 organic layer Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000001819 mass spectrum Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 24
- 125000006850 spacer group Chemical group 0.000 description 11
- 239000010410 layer Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10880182A JPS58225638A (ja) | 1982-06-24 | 1982-06-24 | エッチング終点検出方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10880182A JPS58225638A (ja) | 1982-06-24 | 1982-06-24 | エッチング終点検出方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58225638A JPS58225638A (ja) | 1983-12-27 |
| JPH0454968B2 true JPH0454968B2 (US20040152965A1-20040805-M00009.png) | 1992-09-01 |
Family
ID=14493820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10880182A Granted JPS58225638A (ja) | 1982-06-24 | 1982-06-24 | エッチング終点検出方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58225638A (US20040152965A1-20040805-M00009.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0754808B2 (ja) * | 1986-01-17 | 1995-06-07 | 東京エレクトロン株式会社 | アッシング方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5364636A (en) * | 1976-11-22 | 1978-06-09 | Nippon Telegraph & Telephone | Dry etching device |
| JPS55154581A (en) * | 1979-05-23 | 1980-12-02 | Toshiba Corp | Ion etching method |
-
1982
- 1982-06-24 JP JP10880182A patent/JPS58225638A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5364636A (en) * | 1976-11-22 | 1978-06-09 | Nippon Telegraph & Telephone | Dry etching device |
| JPS55154581A (en) * | 1979-05-23 | 1980-12-02 | Toshiba Corp | Ion etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58225638A (ja) | 1983-12-27 |
