JPH0454610B2 - - Google Patents
Info
- Publication number
- JPH0454610B2 JPH0454610B2 JP59091353A JP9135384A JPH0454610B2 JP H0454610 B2 JPH0454610 B2 JP H0454610B2 JP 59091353 A JP59091353 A JP 59091353A JP 9135384 A JP9135384 A JP 9135384A JP H0454610 B2 JPH0454610 B2 JP H0454610B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- silicon
- powder
- silicon nitride
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000000843 powder Substances 0.000 claims description 30
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- -1 respectively) Chemical group 0.000 claims description 9
- 230000035484 reaction time Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 125000006533 methyl amino methyl group Chemical group [H]N(C([H])([H])[H])C([H])([H])* 0.000 claims 1
- 238000000034 method Methods 0.000 description 36
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- 239000002245 particle Substances 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 13
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 235000019270 ammonium chloride Nutrition 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 5
- 238000005121 nitriding Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- 239000005049 silicon tetrachloride Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- ZYVRJGTVADPHBO-UHFFFAOYSA-N N1=[SiH]N[SiH2]N[SiH2]1 Chemical compound N1=[SiH]N[SiH2]N[SiH2]1 ZYVRJGTVADPHBO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012717 electrostatic precipitator Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 229920001558 organosilicon polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59091353A JPS60235707A (ja) | 1984-05-08 | 1984-05-08 | 複合微粉末の製造方法 |
| US06/712,036 US4594330A (en) | 1984-03-22 | 1985-03-15 | Fine amorphous powder and process for preparing fine powdery mixture of silicon nitride and silicon carbide |
| DE19853510264 DE3510264A1 (de) | 1984-03-22 | 1985-03-21 | Amorphes feinteiliges pulver und verfahren zur herstellung einer feinteiligen pulvermischung aus siliciumnitrid und siliciumcarbid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59091353A JPS60235707A (ja) | 1984-05-08 | 1984-05-08 | 複合微粉末の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60235707A JPS60235707A (ja) | 1985-11-22 |
| JPH0454610B2 true JPH0454610B2 (de) | 1992-08-31 |
Family
ID=14024029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59091353A Granted JPS60235707A (ja) | 1984-03-22 | 1984-05-08 | 複合微粉末の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60235707A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0764533B2 (ja) * | 1984-11-26 | 1995-07-12 | 三菱瓦斯化学株式会社 | 炭化珪素微粉末の製造方法 |
| JPS6148409A (ja) * | 1984-08-16 | 1986-03-10 | Shin Etsu Chem Co Ltd | けい素、炭素、窒素からなる微粉末およびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4969717A (de) * | 1972-09-05 | 1974-07-05 | ||
| JPS54132500A (en) * | 1978-04-05 | 1979-10-15 | Toshiba Ceramics Co | Manufacture of silicon nitride powder |
-
1984
- 1984-05-08 JP JP59091353A patent/JPS60235707A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4969717A (de) * | 1972-09-05 | 1974-07-05 | ||
| JPS54132500A (en) * | 1978-04-05 | 1979-10-15 | Toshiba Ceramics Co | Manufacture of silicon nitride powder |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60235707A (ja) | 1985-11-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2040902A (en) | High purity silicon nitride and its production | |
| US4613490A (en) | Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof | |
| US4619905A (en) | Process for the synthesis of silicon nitride | |
| US4346068A (en) | Process for preparing high-purity α-type silicon nitride | |
| JPH0476924B2 (de) | ||
| JPS6111886B2 (de) | ||
| JPS62241812A (ja) | 窒化珪素の製造法 | |
| JPH0454610B2 (de) | ||
| JPS5930645B2 (ja) | 高純度α型窒化珪素の製造法 | |
| JPH0454609B2 (de) | ||
| JPS6111885B2 (de) | ||
| JPS61136904A (ja) | 窒化珪素と炭化珪素との複合微粉末の製造方法 | |
| JPS60195099A (ja) | ウイスカ−状窒化珪素の製造法 | |
| JPS61247608A (ja) | 窒化珪素と炭化珪素との混合微粉末の製造方法 | |
| JPS60200814A (ja) | 窒化珪素と炭化珪素との複合微粉末の製造方法 | |
| JPS6227003B2 (de) | ||
| JPS61127606A (ja) | 窒化珪素または炭化珪素の製造方法 | |
| JPS60200812A (ja) | 窒化珪素と炭化珪素との複合微粉末の製造方法 | |
| JPS63230508A (ja) | 窒化ケイ素−炭化ケイ素混合微粉末または窒化ケイ素微粉末の製造法 | |
| JPS6163510A (ja) | 複合微粉末の製造方法 | |
| Kasai et al. | Synthesis of Si3N4 powder by thermal decomposition of Si (NH) 2 and sintering properties | |
| JPS6163506A (ja) | 窒化珪素微粉末の製造方法 | |
| JPH062568B2 (ja) | 高純度炭化けい素粉末の製造方法 | |
| JPH0121090B2 (de) | ||
| JPS61127616A (ja) | 炭化珪素微粉末の製造方法 |