JPS6111886B2 - - Google Patents
Info
- Publication number
- JPS6111886B2 JPS6111886B2 JP56149615A JP14961581A JPS6111886B2 JP S6111886 B2 JPS6111886 B2 JP S6111886B2 JP 56149615 A JP56149615 A JP 56149615A JP 14961581 A JP14961581 A JP 14961581A JP S6111886 B2 JPS6111886 B2 JP S6111886B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- silicon nitride
- nitrogen
- silicon
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000843 powder Substances 0.000 claims description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 41
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 18
- -1 nitrogen-containing silane compound Chemical class 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 9
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 239000013078 crystal Substances 0.000 description 14
- 239000000047 product Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 3
- 229910000071 diazene Inorganic materials 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005469 granulation Methods 0.000 description 3
- 230000003179 granulation Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005695 dehalogenation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012772 electrical insulation material Substances 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14961581A JPS5855316A (ja) | 1981-09-24 | 1981-09-24 | 窒化珪素粉末の製造法 |
| DE19823235304 DE3235304A1 (de) | 1981-09-24 | 1982-09-24 | Verfahren zum herstellen von siliciumnitrid-pulver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14961581A JPS5855316A (ja) | 1981-09-24 | 1981-09-24 | 窒化珪素粉末の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5855316A JPS5855316A (ja) | 1983-04-01 |
| JPS6111886B2 true JPS6111886B2 (de) | 1986-04-05 |
Family
ID=15479076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14961581A Granted JPS5855316A (ja) | 1981-09-24 | 1981-09-24 | 窒化珪素粉末の製造法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5855316A (de) |
| DE (1) | DE3235304A1 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010114141A1 (ja) | 2009-03-30 | 2010-10-07 | 宇部興産株式会社 | 含窒素シラン化合物粉末及びその製造方法 |
| JP2011213546A (ja) * | 2010-03-31 | 2011-10-27 | Ube Industries Ltd | 結晶質窒化ケイ素粉末の製造方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5939704A (ja) * | 1982-08-26 | 1984-03-05 | Asahi Glass Co Ltd | 窒化珪素の合成法 |
| JPS61191506A (ja) * | 1985-02-18 | 1986-08-26 | Toyo Soda Mfg Co Ltd | 高α型窒化珪素粉末の製造法 |
| JPS62148309A (ja) * | 1985-12-23 | 1987-07-02 | Toyo Soda Mfg Co Ltd | 高α型窒化珪素粉末の製造法 |
| JP2907366B2 (ja) * | 1993-05-18 | 1999-06-21 | 宇部興産株式会社 | 結晶質窒化珪素粉末の製造法 |
| JP5589294B2 (ja) * | 2009-03-30 | 2014-09-17 | 宇部興産株式会社 | 含窒素シラン化合物粉末及びその製造方法 |
| JP5589295B2 (ja) * | 2009-03-30 | 2014-09-17 | 宇部興産株式会社 | 含窒素シラン化合物粉末及びその製造方法 |
| EP2554629B1 (de) * | 2010-03-31 | 2016-03-09 | Ube Industries, Ltd. | Verfahren zur herstellung von nitridphosphor auf sialonbasis sowie nitridphosphor auf sialonbasis |
| KR101574888B1 (ko) * | 2014-04-14 | 2015-12-07 | 오씨아이 주식회사 | 입자크기의 균일도를 향상시킨 연속식 질화규소 제조장치 및 제조방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52130300A (en) * | 1976-04-26 | 1977-11-01 | Sato Kenkyusho | Constanttpressure mechanism for hand labeler or the like |
| JPS54124898A (en) * | 1978-03-22 | 1979-09-28 | Toyo Soda Mfg Co Ltd | Preparation of silicon nitride |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4101616A (en) * | 1975-10-30 | 1978-07-18 | Gte Sylvania Incorporated | Process for producing Si3 N4 article |
| US4264547A (en) * | 1978-11-08 | 1981-04-28 | Battelle Memorial Institute | Silicon nitride-based sintering composition |
| JPS5595605A (en) * | 1979-01-10 | 1980-07-21 | Toyo Soda Mfg Co Ltd | High purity silicon nitride and production thereof |
-
1981
- 1981-09-24 JP JP14961581A patent/JPS5855316A/ja active Granted
-
1982
- 1982-09-24 DE DE19823235304 patent/DE3235304A1/de not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52130300A (en) * | 1976-04-26 | 1977-11-01 | Sato Kenkyusho | Constanttpressure mechanism for hand labeler or the like |
| JPS54124898A (en) * | 1978-03-22 | 1979-09-28 | Toyo Soda Mfg Co Ltd | Preparation of silicon nitride |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010114141A1 (ja) | 2009-03-30 | 2010-10-07 | 宇部興産株式会社 | 含窒素シラン化合物粉末及びその製造方法 |
| JP2011213546A (ja) * | 2010-03-31 | 2011-10-27 | Ube Industries Ltd | 結晶質窒化ケイ素粉末の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5855316A (ja) | 1983-04-01 |
| DE3235304A1 (de) | 1983-04-14 |
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