JPH0453104B2 - - Google Patents
Info
- Publication number
- JPH0453104B2 JPH0453104B2 JP60233826A JP23382685A JPH0453104B2 JP H0453104 B2 JPH0453104 B2 JP H0453104B2 JP 60233826 A JP60233826 A JP 60233826A JP 23382685 A JP23382685 A JP 23382685A JP H0453104 B2 JPH0453104 B2 JP H0453104B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- island
- electrode
- capacitance
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60233826A JPS6292459A (ja) | 1985-10-18 | 1985-10-18 | 半導体容量結合素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60233826A JPS6292459A (ja) | 1985-10-18 | 1985-10-18 | 半導体容量結合素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6292459A JPS6292459A (ja) | 1987-04-27 |
| JPH0453104B2 true JPH0453104B2 (OSRAM) | 1992-08-25 |
Family
ID=16961167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60233826A Granted JPS6292459A (ja) | 1985-10-18 | 1985-10-18 | 半導体容量結合素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6292459A (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2623692B2 (ja) * | 1988-01-22 | 1997-06-25 | ソニー株式会社 | 半導体回路装置 |
| JP2740038B2 (ja) * | 1990-06-18 | 1998-04-15 | 株式会社東芝 | Mos(mis)型コンデンサー |
| US5355014A (en) * | 1993-03-03 | 1994-10-11 | Bhasker Rao | Semiconductor device with integrated RC network and Schottky diode |
| JPH10163421A (ja) * | 1996-11-29 | 1998-06-19 | Sanyo Electric Co Ltd | 半導体集積回路 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5565453A (en) * | 1978-11-10 | 1980-05-16 | Nec Corp | Semiconductor device |
| JPS60170964A (ja) * | 1984-02-15 | 1985-09-04 | Rohm Co Ltd | 容量素子 |
-
1985
- 1985-10-18 JP JP60233826A patent/JPS6292459A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6292459A (ja) | 1987-04-27 |
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