JPH0451067B2 - - Google Patents

Info

Publication number
JPH0451067B2
JPH0451067B2 JP60084834A JP8483485A JPH0451067B2 JP H0451067 B2 JPH0451067 B2 JP H0451067B2 JP 60084834 A JP60084834 A JP 60084834A JP 8483485 A JP8483485 A JP 8483485A JP H0451067 B2 JPH0451067 B2 JP H0451067B2
Authority
JP
Japan
Prior art keywords
region
collector
island
base
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60084834A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61242062A (ja
Inventor
Teruo Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60084834A priority Critical patent/JPS61242062A/ja
Priority to KR1019860002820A priority patent/KR900000826B1/ko
Priority to CN86102691.8A priority patent/CN1004456B/zh
Publication of JPS61242062A publication Critical patent/JPS61242062A/ja
Priority to US07/119,668 priority patent/US4780425A/en
Publication of JPH0451067B2 publication Critical patent/JPH0451067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10W15/00—
    • H10W15/01—

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP60084834A 1985-04-19 1985-04-19 半導体集積回路の製造方法 Granted JPS61242062A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60084834A JPS61242062A (ja) 1985-04-19 1985-04-19 半導体集積回路の製造方法
KR1019860002820A KR900000826B1 (ko) 1985-04-19 1986-04-14 반도체집적회로의 제조방법
CN86102691.8A CN1004456B (zh) 1985-04-19 1986-04-19 半导体器件及其制造方法
US07/119,668 US4780425A (en) 1985-04-19 1987-11-12 Method of making a bipolar transistor with double diffused isolation regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60084834A JPS61242062A (ja) 1985-04-19 1985-04-19 半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS61242062A JPS61242062A (ja) 1986-10-28
JPH0451067B2 true JPH0451067B2 (index.php) 1992-08-18

Family

ID=13841810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60084834A Granted JPS61242062A (ja) 1985-04-19 1985-04-19 半導体集積回路の製造方法

Country Status (2)

Country Link
JP (1) JPS61242062A (index.php)
KR (1) KR900000826B1 (index.php)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128751A (ja) * 1986-11-19 1988-06-01 Sanyo Electric Co Ltd 縦型ｐｎｐトランジスタ

Also Published As

Publication number Publication date
JPS61242062A (ja) 1986-10-28
KR860008620A (ko) 1986-11-17
KR900000826B1 (ko) 1990-02-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term