JPH044756B2 - - Google Patents

Info

Publication number
JPH044756B2
JPH044756B2 JP27675486A JP27675486A JPH044756B2 JP H044756 B2 JPH044756 B2 JP H044756B2 JP 27675486 A JP27675486 A JP 27675486A JP 27675486 A JP27675486 A JP 27675486A JP H044756 B2 JPH044756 B2 JP H044756B2
Authority
JP
Japan
Prior art keywords
oxide film
forming
gate
semiconductor substrate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP27675486A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63131583A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP27675486A priority Critical patent/JPS63131583A/ja
Priority to EP95114168A priority patent/EP0690513B1/en
Priority to DE3752273T priority patent/DE3752273T2/de
Priority to EP92101661A priority patent/EP0481965B1/en
Priority to DE3752215T priority patent/DE3752215T2/de
Priority to DE87310185T priority patent/DE3789003T2/de
Priority to EP93101675A priority patent/EP0547030B1/en
Priority to DE3752255T priority patent/DE3752255T2/de
Priority to EP87310185A priority patent/EP0268472B1/en
Publication of JPS63131583A publication Critical patent/JPS63131583A/ja
Priority to US07/752,934 priority patent/US5115287A/en
Publication of JPH044756B2 publication Critical patent/JPH044756B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP27675486A 1986-11-19 1986-11-21 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法 Granted JPS63131583A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP27675486A JPS63131583A (ja) 1986-11-21 1986-11-21 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法
EP95114168A EP0690513B1 (en) 1986-11-19 1987-11-10 Step-cut insulated gate static induction transistors and method of manufacturing the same
DE3752273T DE3752273T2 (de) 1986-11-19 1987-11-10 Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung
DE87310185T DE3789003T2 (de) 1986-11-19 1987-11-18 Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung.
DE3752215T DE3752215T2 (de) 1986-11-19 1987-11-18 Verfahren zur Herstellung der Statischen Induktionstransistoren mit isoliertem Gatter in einer eingeschnitteten Stufe
EP92101661A EP0481965B1 (en) 1986-11-19 1987-11-18 Method of manufacturing step-cut insulated gate static induction transistors
EP93101675A EP0547030B1 (en) 1986-11-19 1987-11-18 Step-cut insulated gate static induction transistors and method of manufacturing the same
DE3752255T DE3752255T2 (de) 1986-11-19 1987-11-18 Statische Induktiontransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung
EP87310185A EP0268472B1 (en) 1986-11-19 1987-11-18 Step-cut insulated gate static induction transistors and method of manufacturing the same
US07/752,934 US5115287A (en) 1986-11-19 1991-08-30 Step-cut insulated gate static induction transistors and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27675486A JPS63131583A (ja) 1986-11-21 1986-11-21 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS63131583A JPS63131583A (ja) 1988-06-03
JPH044756B2 true JPH044756B2 (cs) 1992-01-29

Family

ID=17573875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27675486A Granted JPS63131583A (ja) 1986-11-19 1986-11-21 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS63131583A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821716B2 (ja) * 1991-09-24 1996-03-04 株式会社小電力高速通信研究所 切り込み型絶縁ゲート静電誘導トランジスタの製造方法

Also Published As

Publication number Publication date
JPS63131583A (ja) 1988-06-03

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