JPH0445985B2 - - Google Patents

Info

Publication number
JPH0445985B2
JPH0445985B2 JP58035846A JP3584683A JPH0445985B2 JP H0445985 B2 JPH0445985 B2 JP H0445985B2 JP 58035846 A JP58035846 A JP 58035846A JP 3584683 A JP3584683 A JP 3584683A JP H0445985 B2 JPH0445985 B2 JP H0445985B2
Authority
JP
Japan
Prior art keywords
lead
resin
nickel
frame
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58035846A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59161850A (ja
Inventor
Akira Suzuki
Hiroshi Tsuneno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58035846A priority Critical patent/JPS59161850A/ja
Publication of JPS59161850A publication Critical patent/JPS59161850A/ja
Publication of JPH0445985B2 publication Critical patent/JPH0445985B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP58035846A 1983-03-07 1983-03-07 樹脂封止型半導体装置およびそれに用いるリ−ドフレ−ム Granted JPS59161850A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58035846A JPS59161850A (ja) 1983-03-07 1983-03-07 樹脂封止型半導体装置およびそれに用いるリ−ドフレ−ム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58035846A JPS59161850A (ja) 1983-03-07 1983-03-07 樹脂封止型半導体装置およびそれに用いるリ−ドフレ−ム

Publications (2)

Publication Number Publication Date
JPS59161850A JPS59161850A (ja) 1984-09-12
JPH0445985B2 true JPH0445985B2 (enFirst) 1992-07-28

Family

ID=12453349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58035846A Granted JPS59161850A (ja) 1983-03-07 1983-03-07 樹脂封止型半導体装置およびそれに用いるリ−ドフレ−ム

Country Status (1)

Country Link
JP (1) JPS59161850A (enFirst)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603144A (ja) * 1983-06-21 1985-01-09 Oki Electric Ind Co Ltd 半導体パツケ−ジのリ−ド処理方法
JPS6186948U (enFirst) * 1984-11-14 1986-06-07
JP2596542B2 (ja) * 1986-05-12 1997-04-02 株式会社日立製作所 リードフレームおよびそれを用いた半導体装置
JPH03280456A (ja) * 1990-03-28 1991-12-11 Mitsui High Tec Inc 半導体装置に用いるリードフレーム
JPH06196603A (ja) * 1992-12-23 1994-07-15 Shinko Electric Ind Co Ltd リードフレームの製造方法
JPH08280350A (ja) * 1995-04-13 1996-10-29 Yasue:Kk 寒干し大根の加工方法
US6713852B2 (en) * 2002-02-01 2004-03-30 Texas Instruments Incorporated Semiconductor leadframes plated with thick nickel, minimum palladium, and pure tin
JP2004200249A (ja) 2002-12-16 2004-07-15 Nec Electronics Corp 電子部品及びその製造方法並びに製造装置
CN104505375A (zh) * 2014-11-03 2015-04-08 南通富士通微电子股份有限公司 半导体封装结构
US10062639B2 (en) * 2014-12-10 2018-08-28 Stmicroelectronics Sdn Bhd Integrated circuit device with plating on lead interconnection point and method of forming the device

Also Published As

Publication number Publication date
JPS59161850A (ja) 1984-09-12

Similar Documents

Publication Publication Date Title
JP3718181B2 (ja) 半導体集積回路装置およびその製造方法
JP2552822B2 (ja) 半導体パッケージおよびその製造方法
US8994159B2 (en) Semiconductor device and manufacturing method thereof
US6387732B1 (en) Methods of attaching a semiconductor chip to a leadframe with a footprint of about the same size as the chip and packages formed thereby
JP3537417B2 (ja) 半導体装置およびその製造方法
JP2001230360A (ja) 半導体集積回路装置およびその製造方法
JPH0445985B2 (enFirst)
CN1134839C (zh) 引线框架及涂敷引线框架的方法
JPS6050343B2 (ja) 半導体装置製造用リ−ドフレ−ム
JPH03295262A (ja) リードフレームおよびその製造方法
JP4045985B2 (ja) 樹脂封止型電子装置
KR100591235B1 (ko) 반도체 장치
JP3566269B2 (ja) リードフレーム及びその製造方法、及び半導体装置。
WO2002061768A1 (en) Resistor connector and its manufacturing method
JP2596542B2 (ja) リードフレームおよびそれを用いた半導体装置
JPH053280A (ja) 半導体装置
JPS60119765A (ja) 樹脂封止型半導体装置およびそれに用いるリ−ドフレ−ム
JP3191684B2 (ja) 電気めっきリードを有する半導体素子の製造方法
JPS61242051A (ja) 半導体装置
JPH07135203A (ja) 半導体装置
JPH0567069B2 (enFirst)
JP2972679B2 (ja) リードフレーム並びに樹脂封止型半導体装置及びその製造方法
JPS6050342B2 (ja) 半導体装置製造用リ−ドフレ−ム
JP2743567B2 (ja) 樹脂封止型集積回路
JPS63310149A (ja) 高集積化ｉｃ用パッケ−ジおよびその製造方法