JPH0435439B2 - - Google Patents

Info

Publication number
JPH0435439B2
JPH0435439B2 JP58000398A JP39883A JPH0435439B2 JP H0435439 B2 JPH0435439 B2 JP H0435439B2 JP 58000398 A JP58000398 A JP 58000398A JP 39883 A JP39883 A JP 39883A JP H0435439 B2 JPH0435439 B2 JP H0435439B2
Authority
JP
Japan
Prior art keywords
silicon
deposition
etching
single crystal
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58000398A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58120595A (ja
Inventor
Furanshisu Koobooi Junia Jon
Reon Jasutoruzebusukii Rubomia
Kaaruton Buratsukusutoon Sukotsuto
Henrii Paguriaro Junia Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23326867&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0435439(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS58120595A publication Critical patent/JPS58120595A/ja
Publication of JPH0435439B2 publication Critical patent/JPH0435439B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2905—
    • H10P14/24—
    • H10P14/272—
    • H10P14/276—
    • H10P14/2921—
    • H10P14/3411—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP58000398A 1982-01-12 1983-01-05 マスク層上に単結晶シリコン層を形成する方法 Granted JPS58120595A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33895882A 1982-01-12 1982-01-12
US338958 1982-01-12

Publications (2)

Publication Number Publication Date
JPS58120595A JPS58120595A (ja) 1983-07-18
JPH0435439B2 true JPH0435439B2 (show.php) 1992-06-11

Family

ID=23326867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58000398A Granted JPS58120595A (ja) 1982-01-12 1983-01-05 マスク層上に単結晶シリコン層を形成する方法

Country Status (8)

Country Link
JP (1) JPS58120595A (show.php)
DE (1) DE3300716A1 (show.php)
FR (1) FR2522695B1 (show.php)
GB (1) GB2113465B (show.php)
IN (1) IN157312B (show.php)
IT (1) IT1173651B (show.php)
SE (1) SE462756B (show.php)
YU (1) YU6083A (show.php)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214424A (ja) * 1985-07-11 1987-01-23 Fujitsu Ltd 半導体装置の製造方法
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
US4829016A (en) * 1987-10-19 1989-05-09 Purdue Research Foundation Bipolar transistor by selective and lateral epitaxial overgrowth
US5403771A (en) * 1990-12-26 1995-04-04 Canon Kabushiki Kaisha Process for producing a solar cell by means of epitaxial growth process
JP3272532B2 (ja) * 1993-12-27 2002-04-08 富士通株式会社 半導体装置の製造方法
JP4832022B2 (ja) * 2005-07-29 2011-12-07 株式会社日立国際電気 基板処理装置
JP2010141079A (ja) * 2008-12-11 2010-06-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2010147142A (ja) * 2008-12-17 2010-07-01 Hitachi Kokusai Electric Inc 半導体製造方法と装置
US20110272011A1 (en) * 2009-06-05 2011-11-10 Amberwave, Inc. Solar Cell
JP2012054364A (ja) * 2010-08-31 2012-03-15 Nobuyuki Akiyama シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池
CN115198352B (zh) * 2022-08-24 2024-03-26 西安奕斯伟材料科技股份有限公司 一种外延生长方法及外延晶圆

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL271203A (show.php) * 1960-01-15
US3746608A (en) * 1963-05-14 1973-07-17 Nitto Boseki Co Ltd Shaped article of synthetic resin having mechanically disordered orientation
DE2059116C3 (de) * 1970-12-01 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines Halbleiterbauelementes
US3945864A (en) * 1974-05-28 1976-03-23 Rca Corporation Method of growing thick expitaxial layers of silicon
DE3008058A1 (de) * 1980-03-03 1981-09-17 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zur herstellung einer monolithisch integrierten halbleiterschaltungsanordnung

Also Published As

Publication number Publication date
GB2113465B (en) 1986-08-06
DE3300716C2 (show.php) 1993-01-21
FR2522695B1 (fr) 1987-02-27
DE3300716A1 (de) 1983-07-21
YU6083A (en) 1985-10-31
SE462756B (sv) 1990-08-27
GB2113465A (en) 1983-08-03
IT1173651B (it) 1987-06-24
SE8300040L (sv) 1983-07-13
FR2522695A1 (fr) 1983-09-09
SE8300040D0 (sv) 1983-01-04
IT8319043A0 (it) 1983-01-10
IN157312B (show.php) 1986-03-01
JPS58120595A (ja) 1983-07-18

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