JPH0434312B2 - - Google Patents

Info

Publication number
JPH0434312B2
JPH0434312B2 JP55141919A JP14191980A JPH0434312B2 JP H0434312 B2 JPH0434312 B2 JP H0434312B2 JP 55141919 A JP55141919 A JP 55141919A JP 14191980 A JP14191980 A JP 14191980A JP H0434312 B2 JPH0434312 B2 JP H0434312B2
Authority
JP
Japan
Prior art keywords
region
emitter
current
doping concentration
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55141919A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5698864A (en
Inventor
Shurangenotsuto Hainritsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OIPETSUKU OIROPEEITSUSHE G FUYUURU RAISUTSUNGUSUHARUPURAITAA MBH UNTO CO KG
Original Assignee
OIPETSUKU OIROPEEITSUSHE G FUYUURU RAISUTSUNGUSUHARUPURAITAA MBH UNTO CO KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OIPETSUKU OIROPEEITSUSHE G FUYUURU RAISUTSUNGUSUHARUPURAITAA MBH UNTO CO KG filed Critical OIPETSUKU OIROPEEITSUSHE G FUYUURU RAISUTSUNGUSUHARUPURAITAA MBH UNTO CO KG
Publication of JPS5698864A publication Critical patent/JPS5698864A/ja
Publication of JPH0434312B2 publication Critical patent/JPH0434312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Thyristors (AREA)
JP14191980A 1979-10-10 1980-10-09 Semiconductor constituent element Granted JPS5698864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2941021A DE2941021C2 (de) 1979-10-10 1979-10-10 Halbleiterbauelement mit mindestens einer Emitter-Basis-Struktur

Publications (2)

Publication Number Publication Date
JPS5698864A JPS5698864A (en) 1981-08-08
JPH0434312B2 true JPH0434312B2 (enrdf_load_stackoverflow) 1992-06-05

Family

ID=6083126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14191980A Granted JPS5698864A (en) 1979-10-10 1980-10-09 Semiconductor constituent element

Country Status (3)

Country Link
JP (1) JPS5698864A (enrdf_load_stackoverflow)
DE (1) DE2941021C2 (enrdf_load_stackoverflow)
SE (1) SE456464B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3339393C2 (de) * 1983-10-29 1986-12-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer unterhalb einer äußeren hochdotierten Zone liegenden s-n-Zonenfolge einer Halbleiterstruktur aus Silicium
JPS60187058A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 半導体装置
DE3424222A1 (de) * 1984-06-30 1986-01-09 Brown, Boveri & Cie Ag, 6800 Mannheim Abschaltbarer thyristor
JPS6251259A (ja) * 1985-08-30 1987-03-05 Fuji Electric Co Ltd Ｇｔｏサイリスタ
DE3884652D1 (de) * 1987-04-07 1993-11-11 Bbc Brown Boveri & Cie Gate-Ausschaltthyristor und Verfahren zu dessen Herstellung.
DE19740906C1 (de) * 1997-09-17 1999-03-18 Siemens Ag Vertikales Halbleiterbauelement mit einstellbarer Emittereffizienz
DE10048165B4 (de) * 2000-09-28 2008-10-16 Infineon Technologies Ag Leistungshalbleiterbauelement mit einer beabstandet zu einer Emitterzone angeordneten Stoppzone

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH543178A (de) * 1972-03-27 1973-10-15 Bbc Brown Boveri & Cie Kontinuierlich steuerbares Leistungshalbleiterbauelement
DE2461207C3 (de) * 1974-12-23 1978-03-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
JPS5912025B2 (ja) * 1976-11-26 1984-03-19 三菱電機株式会社 サイリスタ

Also Published As

Publication number Publication date
SE456464B (sv) 1988-10-03
JPS5698864A (en) 1981-08-08
DE2941021C2 (de) 1985-07-04
SE8006717L (sv) 1981-04-11
DE2941021A1 (de) 1981-04-23

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