SE456464B - Halvledarelement med minst en emitterbasstruktur vars emitterverksamhet er liten vid laga stromtetheter och kraftigt okar i ett onskat hogre stromtethetsomrade - Google Patents

Halvledarelement med minst en emitterbasstruktur vars emitterverksamhet er liten vid laga stromtetheter och kraftigt okar i ett onskat hogre stromtethetsomrade

Info

Publication number
SE456464B
SE456464B SE8006717A SE8006717A SE456464B SE 456464 B SE456464 B SE 456464B SE 8006717 A SE8006717 A SE 8006717A SE 8006717 A SE8006717 A SE 8006717A SE 456464 B SE456464 B SE 456464B
Authority
SE
Sweden
Prior art keywords
zone
emitter
current
base
shorting
Prior art date
Application number
SE8006717A
Other languages
English (en)
Swedish (sv)
Other versions
SE8006717L (sv
Inventor
H Schlangenotto
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of SE8006717L publication Critical patent/SE8006717L/
Publication of SE456464B publication Critical patent/SE456464B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Thyristors (AREA)
SE8006717A 1979-10-10 1980-09-25 Halvledarelement med minst en emitterbasstruktur vars emitterverksamhet er liten vid laga stromtetheter och kraftigt okar i ett onskat hogre stromtethetsomrade SE456464B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2941021A DE2941021C2 (de) 1979-10-10 1979-10-10 Halbleiterbauelement mit mindestens einer Emitter-Basis-Struktur

Publications (2)

Publication Number Publication Date
SE8006717L SE8006717L (sv) 1981-04-11
SE456464B true SE456464B (sv) 1988-10-03

Family

ID=6083126

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8006717A SE456464B (sv) 1979-10-10 1980-09-25 Halvledarelement med minst en emitterbasstruktur vars emitterverksamhet er liten vid laga stromtetheter och kraftigt okar i ett onskat hogre stromtethetsomrade

Country Status (3)

Country Link
JP (1) JPS5698864A (enrdf_load_stackoverflow)
DE (1) DE2941021C2 (enrdf_load_stackoverflow)
SE (1) SE456464B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3339393C2 (de) * 1983-10-29 1986-12-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer unterhalb einer äußeren hochdotierten Zone liegenden s-n-Zonenfolge einer Halbleiterstruktur aus Silicium
JPS60187058A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 半導体装置
DE3424222A1 (de) * 1984-06-30 1986-01-09 Brown, Boveri & Cie Ag, 6800 Mannheim Abschaltbarer thyristor
JPS6251259A (ja) * 1985-08-30 1987-03-05 Fuji Electric Co Ltd Ｇｔｏサイリスタ
DE3884652D1 (de) * 1987-04-07 1993-11-11 Bbc Brown Boveri & Cie Gate-Ausschaltthyristor und Verfahren zu dessen Herstellung.
DE19740906C1 (de) * 1997-09-17 1999-03-18 Siemens Ag Vertikales Halbleiterbauelement mit einstellbarer Emittereffizienz
DE10048165B4 (de) * 2000-09-28 2008-10-16 Infineon Technologies Ag Leistungshalbleiterbauelement mit einer beabstandet zu einer Emitterzone angeordneten Stoppzone

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH543178A (de) * 1972-03-27 1973-10-15 Bbc Brown Boveri & Cie Kontinuierlich steuerbares Leistungshalbleiterbauelement
DE2461207C3 (de) * 1974-12-23 1978-03-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
JPS5912025B2 (ja) * 1976-11-26 1984-03-19 三菱電機株式会社 サイリスタ

Also Published As

Publication number Publication date
JPH0434312B2 (enrdf_load_stackoverflow) 1992-06-05
JPS5698864A (en) 1981-08-08
DE2941021C2 (de) 1985-07-04
SE8006717L (sv) 1981-04-11
DE2941021A1 (de) 1981-04-23

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