JPS5698864A - Semiconductor constituent element - Google Patents

Semiconductor constituent element

Info

Publication number
JPS5698864A
JPS5698864A JP14191980A JP14191980A JPS5698864A JP S5698864 A JPS5698864 A JP S5698864A JP 14191980 A JP14191980 A JP 14191980A JP 14191980 A JP14191980 A JP 14191980A JP S5698864 A JPS5698864 A JP S5698864A
Authority
JP
Japan
Prior art keywords
constituent element
semiconductor constituent
semiconductor
constituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14191980A
Other languages
Japanese (ja)
Other versions
JPH0434312B2 (en
Inventor
Shiyurangenotsuto Hainritsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of JPS5698864A publication Critical patent/JPS5698864A/en
Publication of JPH0434312B2 publication Critical patent/JPH0434312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
JP14191980A 1979-10-10 1980-10-09 Semiconductor constituent element Granted JPS5698864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792941021 DE2941021C2 (en) 1979-10-10 1979-10-10 Semiconductor component with at least one emitter-base structure

Publications (2)

Publication Number Publication Date
JPS5698864A true JPS5698864A (en) 1981-08-08
JPH0434312B2 JPH0434312B2 (en) 1992-06-05

Family

ID=6083126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14191980A Granted JPS5698864A (en) 1979-10-10 1980-10-09 Semiconductor constituent element

Country Status (3)

Country Link
JP (1) JPS5698864A (en)
DE (1) DE2941021C2 (en)
SE (1) SE456464B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251259A (en) * 1985-08-30 1987-03-05 Fuji Electric Co Ltd Gto thyristor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3339393C2 (en) * 1983-10-29 1986-12-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Method for producing an s-n zone sequence of a semiconductor structure made of silicon, located below an outer highly doped zone
JPS60187058A (en) * 1984-03-07 1985-09-24 Hitachi Ltd Semiconductor device
DE3424222A1 (en) * 1984-06-30 1986-01-09 Brown, Boveri & Cie Ag, 6800 Mannheim SWITCHABLE THYRISTOR
DE3884652D1 (en) * 1987-04-07 1993-11-11 Bbc Brown Boveri & Cie Gate turn-off thyristor and method of manufacturing the same.
DE19740906C1 (en) * 1997-09-17 1999-03-18 Siemens Ag Bipolar semiconductor device, e.g. diode, thyristor or IGBT
DE10048165B4 (en) * 2000-09-28 2008-10-16 Infineon Technologies Ag Power semiconductor device having a spaced apart from an emitter zone stop zone

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915382A (en) * 1972-03-27 1974-02-09
JPS5366384A (en) * 1976-11-26 1978-06-13 Mitsubishi Electric Corp Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2461207C3 (en) * 1974-12-23 1978-03-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915382A (en) * 1972-03-27 1974-02-09
JPS5366384A (en) * 1976-11-26 1978-06-13 Mitsubishi Electric Corp Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251259A (en) * 1985-08-30 1987-03-05 Fuji Electric Co Ltd Gto thyristor

Also Published As

Publication number Publication date
SE8006717L (en) 1981-04-11
JPH0434312B2 (en) 1992-06-05
DE2941021C2 (en) 1985-07-04
DE2941021A1 (en) 1981-04-23
SE456464B (en) 1988-10-03

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