JPH043120B2 - - Google Patents
Info
- Publication number
- JPH043120B2 JPH043120B2 JP58237602A JP23760283A JPH043120B2 JP H043120 B2 JPH043120 B2 JP H043120B2 JP 58237602 A JP58237602 A JP 58237602A JP 23760283 A JP23760283 A JP 23760283A JP H043120 B2 JPH043120 B2 JP H043120B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- semiconductor element
- multilayer wiring
- layer
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000011247 coating layer Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- 239000011229 interlayer Substances 0.000 claims description 16
- 229910003460 diamond Inorganic materials 0.000 claims description 14
- 239000010432 diamond Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910000833 kovar Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910016525 CuMo Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 18
- 239000000919 ceramic Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000010953 base metal Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910002555 FeNi Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58237602A JPS60128697A (ja) | 1983-12-15 | 1983-12-15 | 半導体素子搭載用多層配線基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58237602A JPS60128697A (ja) | 1983-12-15 | 1983-12-15 | 半導体素子搭載用多層配線基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60128697A JPS60128697A (ja) | 1985-07-09 |
| JPH043120B2 true JPH043120B2 (enrdf_load_stackoverflow) | 1992-01-22 |
Family
ID=17017750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58237602A Granted JPS60128697A (ja) | 1983-12-15 | 1983-12-15 | 半導体素子搭載用多層配線基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60128697A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01181550A (ja) * | 1988-01-12 | 1989-07-19 | Toppan Printing Co Ltd | 多層電子回路 |
| JP2689986B2 (ja) * | 1988-07-13 | 1997-12-10 | 富士通株式会社 | 電子装置 |
| JP3309492B2 (ja) * | 1993-05-28 | 2002-07-29 | 住友電気工業株式会社 | 半導体装置用基板 |
| JP2004356429A (ja) * | 2003-05-29 | 2004-12-16 | Sumitomo Electric Ind Ltd | サブマウントおよびそれを用いた半導体装置 |
| JP4946502B2 (ja) * | 2007-02-23 | 2012-06-06 | 株式会社ジェイテクト | 回路構造 |
-
1983
- 1983-12-15 JP JP58237602A patent/JPS60128697A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60128697A (ja) | 1985-07-09 |
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