JPH0426213B2 - - Google Patents

Info

Publication number
JPH0426213B2
JPH0426213B2 JP59148108A JP14810884A JPH0426213B2 JP H0426213 B2 JPH0426213 B2 JP H0426213B2 JP 59148108 A JP59148108 A JP 59148108A JP 14810884 A JP14810884 A JP 14810884A JP H0426213 B2 JPH0426213 B2 JP H0426213B2
Authority
JP
Japan
Prior art keywords
etching
film
holes
dry etching
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59148108A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6127636A (ja
Inventor
Jun Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14810884A priority Critical patent/JPS6127636A/ja
Publication of JPS6127636A publication Critical patent/JPS6127636A/ja
Publication of JPH0426213B2 publication Critical patent/JPH0426213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP14810884A 1984-07-17 1984-07-17 ドライエツチング方法 Granted JPS6127636A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14810884A JPS6127636A (ja) 1984-07-17 1984-07-17 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14810884A JPS6127636A (ja) 1984-07-17 1984-07-17 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS6127636A JPS6127636A (ja) 1986-02-07
JPH0426213B2 true JPH0426213B2 (enrdf_load_stackoverflow) 1992-05-06

Family

ID=15445425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14810884A Granted JPS6127636A (ja) 1984-07-17 1984-07-17 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS6127636A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2563180B2 (ja) * 1987-07-27 1996-12-11 日本電信電話株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192030A (en) * 1981-05-20 1982-11-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58127329A (ja) * 1982-01-26 1983-07-29 Seiko Epson Corp 半導体基板の絶縁保護膜の蝕刻方法

Also Published As

Publication number Publication date
JPS6127636A (ja) 1986-02-07

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