JPS6127636A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS6127636A
JPS6127636A JP14810884A JP14810884A JPS6127636A JP S6127636 A JPS6127636 A JP S6127636A JP 14810884 A JP14810884 A JP 14810884A JP 14810884 A JP14810884 A JP 14810884A JP S6127636 A JPS6127636 A JP S6127636A
Authority
JP
Japan
Prior art keywords
etching
film
plasma
dry etching
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14810884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0426213B2 (enrdf_load_stackoverflow
Inventor
Jun Ozaki
純 尾崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP14810884A priority Critical patent/JPS6127636A/ja
Publication of JPS6127636A publication Critical patent/JPS6127636A/ja
Publication of JPH0426213B2 publication Critical patent/JPH0426213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP14810884A 1984-07-17 1984-07-17 ドライエツチング方法 Granted JPS6127636A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14810884A JPS6127636A (ja) 1984-07-17 1984-07-17 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14810884A JPS6127636A (ja) 1984-07-17 1984-07-17 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS6127636A true JPS6127636A (ja) 1986-02-07
JPH0426213B2 JPH0426213B2 (enrdf_load_stackoverflow) 1992-05-06

Family

ID=15445425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14810884A Granted JPS6127636A (ja) 1984-07-17 1984-07-17 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS6127636A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430228A (en) * 1987-07-27 1989-02-01 Nippon Telegraph & Telephone Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192030A (en) * 1981-05-20 1982-11-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58127329A (ja) * 1982-01-26 1983-07-29 Seiko Epson Corp 半導体基板の絶縁保護膜の蝕刻方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192030A (en) * 1981-05-20 1982-11-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58127329A (ja) * 1982-01-26 1983-07-29 Seiko Epson Corp 半導体基板の絶縁保護膜の蝕刻方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430228A (en) * 1987-07-27 1989-02-01 Nippon Telegraph & Telephone Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0426213B2 (enrdf_load_stackoverflow) 1992-05-06

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