JPH0426213B2 - - Google Patents
Info
- Publication number
- JPH0426213B2 JPH0426213B2 JP59148108A JP14810884A JPH0426213B2 JP H0426213 B2 JPH0426213 B2 JP H0426213B2 JP 59148108 A JP59148108 A JP 59148108A JP 14810884 A JP14810884 A JP 14810884A JP H0426213 B2 JPH0426213 B2 JP H0426213B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- holes
- dry etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P50/00—
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59148108A JPS6127636A (ja) | 1984-07-17 | 1984-07-17 | ドライエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59148108A JPS6127636A (ja) | 1984-07-17 | 1984-07-17 | ドライエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6127636A JPS6127636A (ja) | 1986-02-07 |
| JPH0426213B2 true JPH0426213B2 (cg-RX-API-DMAC10.html) | 1992-05-06 |
Family
ID=15445425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59148108A Granted JPS6127636A (ja) | 1984-07-17 | 1984-07-17 | ドライエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6127636A (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2563180B2 (ja) * | 1987-07-27 | 1996-12-11 | 日本電信電話株式会社 | 半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57192030A (en) * | 1981-05-20 | 1982-11-26 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS58127329A (ja) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | 半導体基板の絶縁保護膜の蝕刻方法 |
-
1984
- 1984-07-17 JP JP59148108A patent/JPS6127636A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6127636A (ja) | 1986-02-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60208838A (ja) | ポリイミドの傾斜エツチング法 | |
| EP0050972B1 (en) | Method of manufacturing a semiconductor device with an interconnection electrode layer | |
| JPS5916334A (ja) | ドライエツチング方法 | |
| JP2757838B2 (ja) | 半導体装置の製造方法 | |
| JPH0426213B2 (cg-RX-API-DMAC10.html) | ||
| JPH0313744B2 (cg-RX-API-DMAC10.html) | ||
| JP2888213B2 (ja) | 半導体装置の製造方法 | |
| JP3567635B2 (ja) | コンタクト形成方法 | |
| JPH0194621A (ja) | 半導体装置の製造方法 | |
| JPS60115255A (ja) | 半導体装置の製造方法 | |
| JP2535148B2 (ja) | コンタクトホ−ルの形成方法 | |
| KR100668726B1 (ko) | 반도체 소자의 비트라인 콘택 형성방법 | |
| JPH0745551A (ja) | コンタクトホールの形成方法 | |
| JPH01248523A (ja) | 半導体装置の製造方法 | |
| JPH07193126A (ja) | 半導体装置及びその製造方法 | |
| KR100365767B1 (ko) | 반도체장치의콘택홀형성방법 | |
| JPH02206115A (ja) | 半導体装置の製造方法 | |
| JPH05234932A (ja) | 半導体装置の製造方法及び半導体装置 | |
| JP3291387B2 (ja) | 半導体装置の製造方法 | |
| JPH0729993A (ja) | 半導体装置 | |
| JPH06314685A (ja) | 半導体装置製造方法 | |
| JPS5933849A (ja) | 半導体装置およびその製造方法 | |
| JPH07193071A (ja) | 半導体装置の製造方法 | |
| JPH05243388A (ja) | 半導体装置の製造方法 | |
| JPH04100218A (ja) | 半導体装置の製造方法 |