JPH042553B2 - - Google Patents

Info

Publication number
JPH042553B2
JPH042553B2 JP59243790A JP24379084A JPH042553B2 JP H042553 B2 JPH042553 B2 JP H042553B2 JP 59243790 A JP59243790 A JP 59243790A JP 24379084 A JP24379084 A JP 24379084A JP H042553 B2 JPH042553 B2 JP H042553B2
Authority
JP
Japan
Prior art keywords
substrate
atomic layer
evaporation source
growth
molecular beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59243790A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61122193A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP24379084A priority Critical patent/JPS61122193A/ja
Publication of JPS61122193A publication Critical patent/JPS61122193A/ja
Publication of JPH042553B2 publication Critical patent/JPH042553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP24379084A 1984-11-19 1984-11-19 分子線エピタキシヤル成長方法 Granted JPS61122193A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24379084A JPS61122193A (ja) 1984-11-19 1984-11-19 分子線エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24379084A JPS61122193A (ja) 1984-11-19 1984-11-19 分子線エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS61122193A JPS61122193A (ja) 1986-06-10
JPH042553B2 true JPH042553B2 (enrdf_load_stackoverflow) 1992-01-20

Family

ID=17108994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24379084A Granted JPS61122193A (ja) 1984-11-19 1984-11-19 分子線エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS61122193A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296701A (en) * 1993-04-19 1994-03-22 Owens-Brockway Glass Container Inc. Apparatus for inspecting containers having a dual optical transmission means, a dual light sensing means and a rotating head

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948786B2 (ja) * 1982-11-19 1984-11-28 工業技術院長 分子線結晶成長方法

Also Published As

Publication number Publication date
JPS61122193A (ja) 1986-06-10

Similar Documents

Publication Publication Date Title
JPH05139882A (ja) 分子線源
US6342265B1 (en) Apparatus and method for in-situ thickness and stoichiometry measurement of thin films
US4640720A (en) Method of manufacturing a semiconductor device
WO2004059271A1 (de) Verfahren zum bestimmen der temperatur eines halbleiterwafers in einer schnelheizanlage
DE10329107B4 (de) Verfahren zum Bestimmung wenigstens einer Zustandsvariablen aus einem Modell eines RTP-Systems
JPH042553B2 (enrdf_load_stackoverflow)
Gillet et al. Stranski-Krastanov growth mode of Au ON Mo (llO) surface: Investigation by Auger electron spectroscopy
JPS5992998A (ja) 分子線結晶成長方法
Strite et al. Reliable substrate temperature measurements for high temperature AlGaAs molecular‐beam epitaxy growth
JPH0547631B2 (enrdf_load_stackoverflow)
JPS61220414A (ja) 分子線発生装置
JP2688365B2 (ja) 基板ホルダ
JPH0437908Y2 (enrdf_load_stackoverflow)
JPS63937B2 (enrdf_load_stackoverflow)
JPH03142921A (ja) ３―５族化合物半導体薄膜製造装置
JPS61176131A (ja) 基板温度の測定方法
JP3216950B2 (ja) 基板温度制御装置
JP3199278B2 (ja) 蒸着装置
JPS62290122A (ja) 分子線エピタキシヤル装置の基板温度測定装置
JPS61127695A (ja) 分子線結晶成長装置
JPS62211379A (ja) 蒸着方法
JP2759298B2 (ja) 薄膜の形成方法
JPS61263212A (ja) 分子線エピタキシ用基板ホルダ
JPH0689860A (ja) 半導体結晶成長方法および分子線エピタクシー装置
JPH0543090Y2 (enrdf_load_stackoverflow)