JPS63937B2 - - Google Patents
Info
- Publication number
- JPS63937B2 JPS63937B2 JP54068426A JP6842679A JPS63937B2 JP S63937 B2 JPS63937 B2 JP S63937B2 JP 54068426 A JP54068426 A JP 54068426A JP 6842679 A JP6842679 A JP 6842679A JP S63937 B2 JPS63937 B2 JP S63937B2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- substrate
- thin film
- growth method
- radiation source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6842679A JPS55160421A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6842679A JPS55160421A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55160421A JPS55160421A (en) | 1980-12-13 |
| JPS63937B2 true JPS63937B2 (enrdf_load_stackoverflow) | 1988-01-09 |
Family
ID=13373345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6842679A Granted JPS55160421A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55160421A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS625631A (ja) * | 1985-07-02 | 1987-01-12 | Fujitsu Ltd | 分子線結晶成長装置及び分子線結晶成長方法 |
| US4770895A (en) * | 1985-08-07 | 1988-09-13 | The Commonwealth Of Australia | Control of uniformity of growing alloy film |
| AU592110B2 (en) * | 1985-08-07 | 1990-01-04 | Commonwealth Of Australia, The | Control of uniformity of growing alloy film |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5829635B2 (ja) * | 1975-05-14 | 1983-06-23 | 松下電器産業株式会社 | セツゴウガタデンカイコウカトランジスタノ セイゾウホウホウ |
-
1979
- 1979-05-31 JP JP6842679A patent/JPS55160421A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55160421A (en) | 1980-12-13 |
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