JPS55160421A - Method and device for thin film growth - Google Patents

Method and device for thin film growth

Info

Publication number
JPS55160421A
JPS55160421A JP6842679A JP6842679A JPS55160421A JP S55160421 A JPS55160421 A JP S55160421A JP 6842679 A JP6842679 A JP 6842679A JP 6842679 A JP6842679 A JP 6842679A JP S55160421 A JPS55160421 A JP S55160421A
Authority
JP
Japan
Prior art keywords
substrate
molecular beam
thin film
room
prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6842679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63937B2 (enrdf_load_stackoverflow
Inventor
Tsuneo Tanaka
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6842679A priority Critical patent/JPS55160421A/ja
Publication of JPS55160421A publication Critical patent/JPS55160421A/ja
Publication of JPS63937B2 publication Critical patent/JPS63937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP6842679A 1979-05-31 1979-05-31 Method and device for thin film growth Granted JPS55160421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6842679A JPS55160421A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6842679A JPS55160421A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Publications (2)

Publication Number Publication Date
JPS55160421A true JPS55160421A (en) 1980-12-13
JPS63937B2 JPS63937B2 (enrdf_load_stackoverflow) 1988-01-09

Family

ID=13373345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6842679A Granted JPS55160421A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Country Status (1)

Country Link
JP (1) JPS55160421A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625631A (ja) * 1985-07-02 1987-01-12 Fujitsu Ltd 分子線結晶成長装置及び分子線結晶成長方法
WO1987000966A1 (en) * 1985-08-07 1987-02-12 The Commonwealth Of Australia Control of uniformity of growing alloy film
AU592110B2 (en) * 1985-08-07 1990-01-04 Commonwealth Of Australia, The Control of uniformity of growing alloy film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132977A (en) * 1975-05-14 1976-11-18 Matsushita Electric Ind Co Ltd Junction-type field effect transistor process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132977A (en) * 1975-05-14 1976-11-18 Matsushita Electric Ind Co Ltd Junction-type field effect transistor process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625631A (ja) * 1985-07-02 1987-01-12 Fujitsu Ltd 分子線結晶成長装置及び分子線結晶成長方法
WO1987000966A1 (en) * 1985-08-07 1987-02-12 The Commonwealth Of Australia Control of uniformity of growing alloy film
US4770895A (en) * 1985-08-07 1988-09-13 The Commonwealth Of Australia Control of uniformity of growing alloy film
AU592110B2 (en) * 1985-08-07 1990-01-04 Commonwealth Of Australia, The Control of uniformity of growing alloy film
US4934313A (en) * 1985-08-07 1990-06-19 Commonwealth Of Australia Control of uniformity of growing alloy film

Also Published As

Publication number Publication date
JPS63937B2 (enrdf_load_stackoverflow) 1988-01-09

Similar Documents

Publication Publication Date Title
DK0688332T3 (da) Nye A83543-forbindelser og fremgangsmåder til fremstilling heraf.
YU39431B (en) Process for the manufacture of 13-halo and 13-deoxy derivatives of compounds of the macrolide series, isolated from the fermentation broth of streptomyces avermilitis
US4095114A (en) Arrangement for scattering electrons
JPS55160421A (en) Method and device for thin film growth
NBI et al. Experimental study of the emergence of two-jet dominance in pp collisions at√ s= 630 GeV
CA2085143A1 (en) Method and apparatus for process control of material emitting radiation
DE2401829A1 (de) Fotometeranordnung
SE7709234L (sv) Antitumorantibiotika
JPS5723108A (en) Sampled-value pid controller
EP0160479B1 (en) Method and apparatus for forming a thin film
JPS5641664A (en) Sample-introducing system for mass spectrometer
Criado STUDY OF THE THERMAL DECOMPOSITION OF DOUBLE STRONTIUM AND BARIUM CARBONATES USING A NEW TECHNIQUE. CONSTANT RATE THERMAL ANALYSIS(CRTA)
JPS53135255A (en) Pulse counting system
KR900006838Y1 (ko) 스피커의 음질 및 음향 조정장치
JPS6411965A (en) Thin film forming device
SMIIAN et al. Some ionization properties of a substance bombarded by an intense electron beam(Nickel single crystal target ionization by high voltage electron beam bombardment, using time of flight mass spectroscopic analysis)
JPS51132977A (en) Junction-type field effect transistor process
JPS54865A (en) Molecular beam crystal growing method
DE1773242B2 (de) Mißgerät zur Ermittlung und Regelung der Verdampfungsgeschwindigkeit von im Vakuum verdampften Substanzen
JPH05249248A (ja) 蛍光板モニタ装置
SE419000B (sv) Anordning for att meta en fran puls till puls varierande berfrekvens
JPS57106114A (en) Ion beam sputtering apparatus
JPS52101055A (en) Finely adjusting device for microscope
Wykes Elimination of velocity sidebands in the transmission function of a slotted disk velocity selector
DONAHUE et al. Effect of material properties on the penetration of targets by projectiles, including an appendix on statistical methods of analysis