JPH057253Y2 - - Google Patents
Info
- Publication number
- JPH057253Y2 JPH057253Y2 JP4441588U JP4441588U JPH057253Y2 JP H057253 Y2 JPH057253 Y2 JP H057253Y2 JP 4441588 U JP4441588 U JP 4441588U JP 4441588 U JP4441588 U JP 4441588U JP H057253 Y2 JPH057253 Y2 JP H057253Y2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- growth chamber
- growth
- molecular beam
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001704 evaporation Methods 0.000 claims description 44
- 230000008020 evaporation Effects 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 30
- 238000010521 absorption reaction Methods 0.000 claims description 20
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000002835 absorbance Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052774 Proactinium Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4441588U JPH057253Y2 (enrdf_load_stackoverflow) | 1988-03-31 | 1988-03-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4441588U JPH057253Y2 (enrdf_load_stackoverflow) | 1988-03-31 | 1988-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01147273U JPH01147273U (enrdf_load_stackoverflow) | 1989-10-11 |
| JPH057253Y2 true JPH057253Y2 (enrdf_load_stackoverflow) | 1993-02-24 |
Family
ID=31270774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4441588U Expired - Lifetime JPH057253Y2 (enrdf_load_stackoverflow) | 1988-03-31 | 1988-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH057253Y2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102024202739A1 (de) | 2023-03-31 | 2024-10-02 | Renesas Electronics Corporation | Halbleitervorrichtung, zeitmessverfahren und zeitmessprogramm |
-
1988
- 1988-03-31 JP JP4441588U patent/JPH057253Y2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102024202739A1 (de) | 2023-03-31 | 2024-10-02 | Renesas Electronics Corporation | Halbleitervorrichtung, zeitmessverfahren und zeitmessprogramm |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01147273U (enrdf_load_stackoverflow) | 1989-10-11 |
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