JPS61122193A - 分子線エピタキシヤル成長方法 - Google Patents

分子線エピタキシヤル成長方法

Info

Publication number
JPS61122193A
JPS61122193A JP24379084A JP24379084A JPS61122193A JP S61122193 A JPS61122193 A JP S61122193A JP 24379084 A JP24379084 A JP 24379084A JP 24379084 A JP24379084 A JP 24379084A JP S61122193 A JPS61122193 A JP S61122193A
Authority
JP
Japan
Prior art keywords
atomic layer
substrate
growth
base
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24379084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH042553B2 (enrdf_load_stackoverflow
Inventor
Shunichi Murakami
俊一 村上
Tetsuo Ishida
哲夫 石田
Sumio Sakai
酒井 純朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP24379084A priority Critical patent/JPS61122193A/ja
Publication of JPS61122193A publication Critical patent/JPS61122193A/ja
Publication of JPH042553B2 publication Critical patent/JPH042553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/08Epitaxial-layer growth by condensing ionised vapours

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP24379084A 1984-11-19 1984-11-19 分子線エピタキシヤル成長方法 Granted JPS61122193A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24379084A JPS61122193A (ja) 1984-11-19 1984-11-19 分子線エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24379084A JPS61122193A (ja) 1984-11-19 1984-11-19 分子線エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS61122193A true JPS61122193A (ja) 1986-06-10
JPH042553B2 JPH042553B2 (enrdf_load_stackoverflow) 1992-01-20

Family

ID=17108994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24379084A Granted JPS61122193A (ja) 1984-11-19 1984-11-19 分子線エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS61122193A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06308055A (ja) * 1993-04-19 1994-11-04 Owens Brockway Glass Container Inc 複式光伝送装置、複式光感知装置、および回転ヘッドを有する容器検査装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992998A (ja) * 1982-11-19 1984-05-29 Agency Of Ind Science & Technol 分子線結晶成長方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992998A (ja) * 1982-11-19 1984-05-29 Agency Of Ind Science & Technol 分子線結晶成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06308055A (ja) * 1993-04-19 1994-11-04 Owens Brockway Glass Container Inc 複式光伝送装置、複式光感知装置、および回転ヘッドを有する容器検査装置

Also Published As

Publication number Publication date
JPH042553B2 (enrdf_load_stackoverflow) 1992-01-20

Similar Documents

Publication Publication Date Title
KR20010023079A (ko) 박막의 원 위치 두께와 화학양론 측정을 위한 장치 및 방법
JPS61122193A (ja) 分子線エピタキシヤル成長方法
JPS5992998A (ja) 分子線結晶成長方法
Mueller et al. The preparation of amorphous thin films
Chatillon et al. Thermodynamic analysis of GaAs growth by molecular beam epitaxy at the surface structure transition from 3× 1 to 4× 2
JPS61280610A (ja) 分子線エピタキシヤル成長装置
JP2688365B2 (ja) 基板ホルダ
JPH01208465A (ja) 真空蒸着装置
JP2818124B2 (ja) 半導体装置の製法
JPH0429677A (ja) 真空容器用ガラス窓
JPH057253Y2 (enrdf_load_stackoverflow)
JPS61127695A (ja) 分子線結晶成長装置
JPS61190920A (ja) 分子線結晶成長装置
Strite et al. Reliable substrate temperature measurements for high temperature AlGaAs molecular‐beam epitaxy growth
JPS62290122A (ja) 分子線エピタキシヤル装置の基板温度測定装置
JPS6142125A (ja) Mbe用基板およびその温度測定法
JPS6272113A (ja) 分子線結晶成長装置
JPS62211379A (ja) 蒸着方法
JPS62287616A (ja) 分子線エピタキシヤル装置のシヤツタ構造
JPH05887A (ja) 分子線結晶成長装置
JPH067072B2 (ja) 基板温度の測定法
JPH0689860A (ja) 半導体結晶成長方法および分子線エピタクシー装置
JPH07106251A (ja) 分子線源セル及び分子線エピタキシャル成長装置並びに分子線エピタキシャル成長法
JPS61263212A (ja) 分子線エピタキシ用基板ホルダ
JPH02145765A (ja) 膜厚モニタおよびこれを用いた蒸着装置