JPS61122193A - 分子線エピタキシヤル成長方法 - Google Patents
分子線エピタキシヤル成長方法Info
- Publication number
- JPS61122193A JPS61122193A JP24379084A JP24379084A JPS61122193A JP S61122193 A JPS61122193 A JP S61122193A JP 24379084 A JP24379084 A JP 24379084A JP 24379084 A JP24379084 A JP 24379084A JP S61122193 A JPS61122193 A JP S61122193A
- Authority
- JP
- Japan
- Prior art keywords
- atomic layer
- substrate
- growth
- base
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24379084A JPS61122193A (ja) | 1984-11-19 | 1984-11-19 | 分子線エピタキシヤル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24379084A JPS61122193A (ja) | 1984-11-19 | 1984-11-19 | 分子線エピタキシヤル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61122193A true JPS61122193A (ja) | 1986-06-10 |
| JPH042553B2 JPH042553B2 (enrdf_load_stackoverflow) | 1992-01-20 |
Family
ID=17108994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24379084A Granted JPS61122193A (ja) | 1984-11-19 | 1984-11-19 | 分子線エピタキシヤル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61122193A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06308055A (ja) * | 1993-04-19 | 1994-11-04 | Owens Brockway Glass Container Inc | 複式光伝送装置、複式光感知装置、および回転ヘッドを有する容器検査装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5992998A (ja) * | 1982-11-19 | 1984-05-29 | Agency Of Ind Science & Technol | 分子線結晶成長方法 |
-
1984
- 1984-11-19 JP JP24379084A patent/JPS61122193A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5992998A (ja) * | 1982-11-19 | 1984-05-29 | Agency Of Ind Science & Technol | 分子線結晶成長方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06308055A (ja) * | 1993-04-19 | 1994-11-04 | Owens Brockway Glass Container Inc | 複式光伝送装置、複式光感知装置、および回転ヘッドを有する容器検査装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH042553B2 (enrdf_load_stackoverflow) | 1992-01-20 |
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