JPH0424872B2 - - Google Patents

Info

Publication number
JPH0424872B2
JPH0424872B2 JP57008449A JP844982A JPH0424872B2 JP H0424872 B2 JPH0424872 B2 JP H0424872B2 JP 57008449 A JP57008449 A JP 57008449A JP 844982 A JP844982 A JP 844982A JP H0424872 B2 JPH0424872 B2 JP H0424872B2
Authority
JP
Japan
Prior art keywords
substrate
semiconductor layer
type
solid
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57008449A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125976A (ja
Inventor
Hidetsugu Oda
Shinichi Teranishi
Yasuo Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57008449A priority Critical patent/JPS58125976A/ja
Publication of JPS58125976A publication Critical patent/JPS58125976A/ja
Publication of JPH0424872B2 publication Critical patent/JPH0424872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57008449A 1982-01-22 1982-01-22 固体撮像素子 Granted JPS58125976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008449A JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008449A JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS58125976A JPS58125976A (ja) 1983-07-27
JPH0424872B2 true JPH0424872B2 (ko) 1992-04-28

Family

ID=11693429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008449A Granted JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS58125976A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH073867B2 (ja) * 1985-12-03 1995-01-18 松下電子工業株式会社 固体撮像装置
JPH0715981B2 (ja) * 1985-12-03 1995-02-22 松下電子工業株式会社 固体撮像装置
JP2822393B2 (ja) * 1988-07-30 1998-11-11 ソニー株式会社 固体撮像装置及びその駆動方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481094A (en) * 1977-11-25 1979-06-28 Hewlett Packard Yokogawa Semiconductor photodetector
JPS5495116A (en) * 1978-01-13 1979-07-27 Toshiba Corp Solid image pickup unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481094A (en) * 1977-11-25 1979-06-28 Hewlett Packard Yokogawa Semiconductor photodetector
JPS5495116A (en) * 1978-01-13 1979-07-27 Toshiba Corp Solid image pickup unit

Also Published As

Publication number Publication date
JPS58125976A (ja) 1983-07-27

Similar Documents

Publication Publication Date Title
EP2805353B1 (en) Solid-state image sensor and camera
US4672455A (en) Solid-state image-sensor having reverse-biased substrate and transfer registers
JPS62124771A (ja) 固体撮像装置
JPS58138187A (ja) 固体イメ−ジセンサ
JPH0766961B2 (ja) 固体撮像素子
JP2917361B2 (ja) 固体撮像素子
JPH0424870B2 (ko)
JP2964571B2 (ja) 固体撮像素子
JPH0424872B2 (ko)
EP0499275B1 (en) Solid state imager
JPH0424871B2 (ko)
JPH02278874A (ja) 固体撮像素子及びその製造方法
JPH0425714B2 (ko)
JP3247163B2 (ja) 固体撮像装置及びその製造方法
JPS63312669A (ja) 固体撮像素子
JP3047965B2 (ja) 固体撮像装置
JPH06275809A (ja) 固体撮像素子
JPH0415666B2 (ko)
JPS6321869A (ja) 固体撮像装置
JPH05145056A (ja) 固体撮像素子
JPH0774336A (ja) 固体撮像素子
JPH0391263A (ja) 固体撮像素子
JPH03109743A (ja) 電荷結合素子および該素子を備えた固体撮像素子
JPH04332166A (ja) 固体撮像素子
JPS6273663A (ja) 固体撮像装置およびその駆動方法