JPH0424870B2 - - Google Patents

Info

Publication number
JPH0424870B2
JPH0424870B2 JP57008443A JP844382A JPH0424870B2 JP H0424870 B2 JPH0424870 B2 JP H0424870B2 JP 57008443 A JP57008443 A JP 57008443A JP 844382 A JP844382 A JP 844382A JP H0424870 B2 JPH0424870 B2 JP H0424870B2
Authority
JP
Japan
Prior art keywords
imaging device
solid
state imaging
semiconductor layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57008443A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125970A (ja
Inventor
Shinichi Teranishi
Hidetsugu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57008443A priority Critical patent/JPS58125970A/ja
Publication of JPS58125970A publication Critical patent/JPS58125970A/ja
Publication of JPH0424870B2 publication Critical patent/JPH0424870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57008443A 1982-01-22 1982-01-22 固体撮像装置の製造方法 Granted JPS58125970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008443A JPS58125970A (ja) 1982-01-22 1982-01-22 固体撮像装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008443A JPS58125970A (ja) 1982-01-22 1982-01-22 固体撮像装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58125970A JPS58125970A (ja) 1983-07-27
JPH0424870B2 true JPH0424870B2 (ko) 1992-04-28

Family

ID=11693263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008443A Granted JPS58125970A (ja) 1982-01-22 1982-01-22 固体撮像装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58125970A (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2610010B2 (ja) * 1984-02-29 1997-05-14 ソニー株式会社 縦形オーバーフローイメージセンサー
JPH07120771B2 (ja) * 1984-06-19 1995-12-20 日本電気株式会社 固体撮像装置
JPS61142765A (ja) * 1984-12-17 1986-06-30 Matsushita Electronics Corp 固体撮像装置
JPH07112057B2 (ja) * 1988-09-13 1995-11-29 株式会社東芝 固体撮像装置
JP2833256B2 (ja) * 1991-04-15 1998-12-09 日本電気株式会社 固体撮像装置の製造方法
JPH0846165A (ja) * 1995-03-16 1996-02-16 Sony Corp 縦形オーバーフローイメージセンサー
JP2576813B2 (ja) * 1995-04-22 1997-01-29 ソニー株式会社 縦形オーバーフローイメージセンサーの製造方法
JP4742661B2 (ja) * 2005-04-25 2011-08-10 ソニー株式会社 固体撮像素子の製造方法
JP2016201400A (ja) * 2015-04-07 2016-12-01 リコーイメージング株式会社 撮像素子および撮像装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5495116A (en) * 1978-01-13 1979-07-27 Toshiba Corp Solid image pickup unit
JPS5644576A (en) * 1979-09-18 1981-04-23 Sanyo Electric Co Refrigerated commercial display case and air circulating method thereof
JPS57207383A (en) * 1981-06-15 1982-12-20 Nippon Telegr & Teleph Corp <Ntt> Phototransistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124480U (ko) * 1978-02-20 1979-08-31

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5495116A (en) * 1978-01-13 1979-07-27 Toshiba Corp Solid image pickup unit
JPS5644576A (en) * 1979-09-18 1981-04-23 Sanyo Electric Co Refrigerated commercial display case and air circulating method thereof
JPS57207383A (en) * 1981-06-15 1982-12-20 Nippon Telegr & Teleph Corp <Ntt> Phototransistor

Also Published As

Publication number Publication date
JPS58125970A (ja) 1983-07-27

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