JPH0422218B2 - - Google Patents
Info
- Publication number
- JPH0422218B2 JPH0422218B2 JP58201573A JP20157383A JPH0422218B2 JP H0422218 B2 JPH0422218 B2 JP H0422218B2 JP 58201573 A JP58201573 A JP 58201573A JP 20157383 A JP20157383 A JP 20157383A JP H0422218 B2 JPH0422218 B2 JP H0422218B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline body
- diffraction
- sample
- optical system
- intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 40
- 239000002245 particle Substances 0.000 claims description 16
- 238000005259 measurement Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 4
- 238000013519 translation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 25
- 238000012360 testing method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001028 reflection method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58201573A JPS6093335A (ja) | 1983-10-27 | 1983-10-27 | 多結晶体の結晶粒子状態の検出測定装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58201573A JPS6093335A (ja) | 1983-10-27 | 1983-10-27 | 多結晶体の結晶粒子状態の検出測定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6093335A JPS6093335A (ja) | 1985-05-25 |
JPH0422218B2 true JPH0422218B2 (zh) | 1992-04-16 |
Family
ID=16443297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58201573A Granted JPS6093335A (ja) | 1983-10-27 | 1983-10-27 | 多結晶体の結晶粒子状態の検出測定装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6093335A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013150758A1 (ja) * | 2012-04-04 | 2013-10-10 | 信越化学工業株式会社 | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法 |
WO2013190829A1 (ja) * | 2012-06-18 | 2013-12-27 | 信越化学工業株式会社 | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63139238A (ja) * | 1986-12-01 | 1988-06-11 | Natl Inst For Res In Inorg Mater | 簡易型一次元走査x線回折顕微鏡 |
JPS63139298A (ja) * | 1986-12-01 | 1988-06-11 | 科学技術庁無機材質研究所長 | モノクロメ−タ付簡易型一次元走査x線回折顕微鏡 |
JPH0727080B2 (ja) * | 1986-12-02 | 1995-03-29 | 科学技術庁無機材質研究所長 | 一次元走査x線回折顕微鏡 |
JPH04164239A (ja) * | 1990-10-26 | 1992-06-09 | Natl Inst For Res In Inorg Mater | 粉末x線回折計 |
JP2904055B2 (ja) * | 1995-05-30 | 1999-06-14 | 株式会社島津製作所 | X線回折装置 |
NL1009012C2 (nl) | 1998-04-28 | 1999-10-29 | Stichting Tech Wetenschapp | Werkwijze voor het bepalen van celparameters van een kristalstructuur onder toepassing van diffractie. |
CN100485373C (zh) * | 2004-07-14 | 2009-05-06 | 西南技术工程研究所 | 短波长x射线衍射测量装置和方法 |
JP5903900B2 (ja) * | 2012-01-16 | 2016-04-13 | 住友金属鉱山株式会社 | 粒子存在比率算出方法及び粒子結晶サイズ算出方法 |
JP5923463B2 (ja) * | 2013-06-26 | 2016-05-24 | 信越化学工業株式会社 | 多結晶シリコンの結晶粒径分布の評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 |
EP2818851B1 (en) * | 2013-06-26 | 2023-07-26 | Malvern Panalytical B.V. | Diffraction Imaging |
-
1983
- 1983-10-27 JP JP58201573A patent/JPS6093335A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013150758A1 (ja) * | 2012-04-04 | 2013-10-10 | 信越化学工業株式会社 | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法 |
WO2013190829A1 (ja) * | 2012-06-18 | 2013-12-27 | 信越化学工業株式会社 | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 |
CN104395740A (zh) * | 2012-06-18 | 2015-03-04 | 信越化学工业株式会社 | 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法、多晶硅棒、多晶硅块以及单晶硅的制造方法 |
US9274069B2 (en) | 2012-06-18 | 2016-03-01 | Shin-Etsu Chemical Co., Ltd. | Method for evaluating degree of crystalline orientation of polycrystalline silicon, method for selecting polycrystalline silicon rod, polycrystalline silicon rod, polycrystalline silicon ingot, and method for manufacturing monocrystalline silicon |
Also Published As
Publication number | Publication date |
---|---|
JPS6093335A (ja) | 1985-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7769135B2 (en) | X-ray diffraction wafer mapping method for rhombohedral super-hetero-epitaxy | |
Nagao et al. | X-ray thin film measurement techniques VII. Pole figure measurement | |
He | Introduction to two-dimensional X-ray diffraction | |
Baba‐Kishi et al. | Backscatter Kikuchi diffraction in the SEM for identification of crystallographic point groups | |
JPH0422218B2 (zh) | ||
JP4685877B2 (ja) | 微結晶粒の方位分布測定方法及びその装置 | |
Le Bourlot et al. | Synchrotron X-ray diffraction experiments with a prototype hybrid pixel detector | |
Zolotov et al. | The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups | |
Kovalev et al. | Application of X-ray diffraction methods to studying materials | |
KR100936746B1 (ko) | Χ-선 토포그래피에 의한 결함의 3-차원 분포의 분석 | |
US5353324A (en) | Total reflection X-ray diffraction micrographic method and apparatus | |
He | Two-dimensional powder diffraction | |
JPS63139238A (ja) | 簡易型一次元走査x線回折顕微鏡 | |
JP2905659B2 (ja) | X線装置と該装置を用いた評価解析方法 | |
JPH11304729A (ja) | X線測定方法及びx線測定装置 | |
JPS63139299A (ja) | 一次元走査x線回折顕微鏡 | |
JPS63139300A (ja) | 一次元位置検出器付走査x線回折顕微鏡 | |
Yoneda et al. | Polycrystal Scattering Topography, Scattering Tomography and Their Perspective Fields of Application | |
JPS63139298A (ja) | モノクロメ−タ付簡易型一次元走査x線回折顕微鏡 | |
JPH02266249A (ja) | 結晶面のx線回折測定方法 | |
Ananthanarayanan | Renaissance in X-Ray Diff raction Topography | |
Aubert et al. | Thin-film disorientation measurement using the single-crystal Nonius Kappa CCD diffractometer | |
JP3380921B2 (ja) | 結晶中のひずみの測定方法 | |
Ananthanarayanan et al. | High Resolution Digital X-ray Rocking Curve Topography | |
SU1497533A1 (ru) | Способ контрол структурного совершенства монокристаллов |