JPH0420257B2 - - Google Patents

Info

Publication number
JPH0420257B2
JPH0420257B2 JP56116242A JP11624281A JPH0420257B2 JP H0420257 B2 JPH0420257 B2 JP H0420257B2 JP 56116242 A JP56116242 A JP 56116242A JP 11624281 A JP11624281 A JP 11624281A JP H0420257 B2 JPH0420257 B2 JP H0420257B2
Authority
JP
Japan
Prior art keywords
heat treatment
semiconductor substrate
current amplification
transistor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56116242A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5817668A (ja
Inventor
Toshio Sonobe
Yukio Tsuzuki
Ryuzo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP56116242A priority Critical patent/JPS5817668A/ja
Publication of JPS5817668A publication Critical patent/JPS5817668A/ja
Publication of JPH0420257B2 publication Critical patent/JPH0420257B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
JP56116242A 1981-07-23 1981-07-23 半導体装置の製造方法 Granted JPS5817668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56116242A JPS5817668A (ja) 1981-07-23 1981-07-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56116242A JPS5817668A (ja) 1981-07-23 1981-07-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5817668A JPS5817668A (ja) 1983-02-01
JPH0420257B2 true JPH0420257B2 (enrdf_load_stackoverflow) 1992-04-02

Family

ID=14682307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56116242A Granted JPS5817668A (ja) 1981-07-23 1981-07-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5817668A (enrdf_load_stackoverflow)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312156B2 (enrdf_load_stackoverflow) * 1971-09-27 1978-04-27
JPS4968680A (enrdf_load_stackoverflow) * 1972-11-06 1974-07-03
JPS52115189A (en) * 1976-03-23 1977-09-27 Sony Corp Production of semiconductor device
JPS5512752A (en) * 1978-07-12 1980-01-29 Mitsubishi Electric Corp Semiconductor device manufacturing method
DE3021215A1 (de) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zur stabilisierung der stromverstaerkung von npn-siliciumtransistoren
JPS57141958A (en) * 1981-02-27 1982-09-02 Oki Electric Ind Co Ltd Manufacture of lateral type transistor

Also Published As

Publication number Publication date
JPS5817668A (ja) 1983-02-01

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