JPH0416950B2 - - Google Patents

Info

Publication number
JPH0416950B2
JPH0416950B2 JP58140462A JP14046283A JPH0416950B2 JP H0416950 B2 JPH0416950 B2 JP H0416950B2 JP 58140462 A JP58140462 A JP 58140462A JP 14046283 A JP14046283 A JP 14046283A JP H0416950 B2 JPH0416950 B2 JP H0416950B2
Authority
JP
Japan
Prior art keywords
register
charge
charge transfer
image
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58140462A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59106149A (ja
Inventor
Danfuoosu Koopu Apuruton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS59106149A publication Critical patent/JPS59106149A/ja
Publication of JPH0416950B2 publication Critical patent/JPH0416950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58140462A 1982-11-30 1983-07-29 Ｃｃｄイメ−ジヤ Granted JPS59106149A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US445549 1982-11-30
US06/445,549 US4528596A (en) 1982-11-30 1982-11-30 Suppression of edge effects arising in CCD imager field registers

Publications (2)

Publication Number Publication Date
JPS59106149A JPS59106149A (ja) 1984-06-19
JPH0416950B2 true JPH0416950B2 (en, 2012) 1992-03-25

Family

ID=23769353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58140462A Granted JPS59106149A (ja) 1982-11-30 1983-07-29 Ｃｃｄイメ−ジヤ

Country Status (2)

Country Link
US (1) US4528596A (en, 2012)
JP (1) JPS59106149A (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60165183A (ja) * 1984-02-06 1985-08-28 Canon Inc 撮像素子又は撮像装置
FR2580883B1 (fr) * 1985-04-19 1987-05-22 Thomson Csf Dispositif de lecture par transfert de ligne avec contre-reaction
US4641963A (en) * 1985-05-02 1987-02-10 Rca Corporation Back-illuminated CCD imager adapted for contrast transfer function measurements thereon
JPS6262553A (ja) * 1985-09-12 1987-03-19 Toshiba Corp 固体撮像装置
US4745360A (en) * 1986-05-01 1988-05-17 North American Phillips Corporation, Signetics Division Electron-beam probe system utilizing test device having interdigitated conductive pattern and associated method of using the test device
CN1031156A (zh) * 1987-07-10 1989-02-15 菲利浦光灯制造公司 电荷耦合器件
US5008758A (en) * 1989-05-24 1991-04-16 Massachusetts Institute Of Technology Suppressing dark current in charge-coupled devices
GB9021444D0 (en) * 1990-10-02 1990-11-14 Delco Electronic Overseas Corp Light mask
US6366322B1 (en) 1991-04-15 2002-04-02 Lg Semicon Co., Ltd. Horizontal charge coupled device of CCD image sensor
US5515102A (en) * 1993-03-09 1996-05-07 Hughes Aircraft Company Charge coupled device apparatus having means for correcting for changes in the charge transfer efficiency of a charge coupled device
JP3088591B2 (ja) * 1993-06-17 2000-09-18 松下電器産業株式会社 固体撮像装置および駆動方法
CA2135676A1 (en) * 1994-11-14 1996-05-15 Jean Dumas Device to enhance imaging resolution
US6873362B1 (en) * 1995-03-22 2005-03-29 Sony Corporation Scanning switch transistor for solid-state imaging device
US6693671B1 (en) * 2000-03-22 2004-02-17 Eastman Kodak Company Fast-dump structure for full-frame image sensors with lod antiblooming structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849066B2 (ja) * 1976-02-06 1983-11-01 日本電気株式会社 電荷転送装置
JPS5387619A (en) * 1977-01-13 1978-08-02 Toshiba Corp Solid pickup unit
JPS54127621A (en) * 1978-03-27 1979-10-03 Matsushita Electronics Corp Solid state pickup device
JPS5560378A (en) * 1978-10-30 1980-05-07 Nec Corp Charge coupled device
JPS5651170A (en) * 1979-10-04 1981-05-08 Toshiba Corp Inter-line system charge transfer device
EP0026904A3 (en) * 1979-10-04 1981-12-30 Kabushiki Kaisha Toshiba Solid-state image pick-up device
JPS606147B2 (ja) * 1979-12-07 1985-02-15 株式会社東芝 固体撮像装置
JPS5713763A (en) * 1980-06-30 1982-01-23 Hitachi Ltd Semiconductor device
NL8104102A (nl) * 1981-09-04 1983-04-05 Philips Nv Ladingsgekoppelde inrichting.

Also Published As

Publication number Publication date
US4528596A (en) 1985-07-09
JPS59106149A (ja) 1984-06-19

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