JPH0413764B2 - - Google Patents
Info
- Publication number
- JPH0413764B2 JPH0413764B2 JP57188984A JP18898482A JPH0413764B2 JP H0413764 B2 JPH0413764 B2 JP H0413764B2 JP 57188984 A JP57188984 A JP 57188984A JP 18898482 A JP18898482 A JP 18898482A JP H0413764 B2 JPH0413764 B2 JP H0413764B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic recording
- substrate
- recording medium
- plasma
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 20
- 230000005294 ferromagnetic effect Effects 0.000 claims description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000011133 lead Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 150000003961 organosilicon compounds Chemical class 0.000 claims 1
- 239000007789 gas Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 15
- 239000012159 carrier gas Substances 0.000 description 11
- 239000000178 monomer Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- QQTGJVBUIOTPGZ-UHFFFAOYSA-N CCC[Zn]CCC Chemical compound CCC[Zn]CCC QQTGJVBUIOTPGZ-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- XBXHTOUGJGDVMT-UHFFFAOYSA-N [Ag]c1ccccc1 Chemical compound [Ag]c1ccccc1 XBXHTOUGJGDVMT-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- VJWQKBDLTVGKQE-UHFFFAOYSA-N benzene;cadmium(2+) Chemical compound [Cd+2].C1=CC=[C-]C=C1.C1=CC=[C-]C=C1 VJWQKBDLTVGKQE-UHFFFAOYSA-N 0.000 description 1
- MKHQMLKDCBPKBC-UHFFFAOYSA-N benzene;copper(1+) Chemical compound [Cu+].C1=CC=[C-]C=C1 MKHQMLKDCBPKBC-UHFFFAOYSA-N 0.000 description 1
- BXPPRJFGNCDPFT-UHFFFAOYSA-N bromo(triethyl)germane Chemical compound CC[Ge](Br)(CC)CC BXPPRJFGNCDPFT-UHFFFAOYSA-N 0.000 description 1
- WMFCXPWEKRAKMH-UHFFFAOYSA-N bromo(trimethyl)germane Chemical compound C[Ge](C)(C)Br WMFCXPWEKRAKMH-UHFFFAOYSA-N 0.000 description 1
- CZKMPDNXOGQMFW-UHFFFAOYSA-N chloro(triethyl)germane Chemical compound CC[Ge](Cl)(CC)CC CZKMPDNXOGQMFW-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- SZKXDURZBIICCF-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O SZKXDURZBIICCF-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- QNZRVYCYEMYQMD-UHFFFAOYSA-N copper;pentane-2,4-dione Chemical compound [Cu].CC(=O)CC(C)=O QNZRVYCYEMYQMD-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PWZMTDAOMOIOGV-UHFFFAOYSA-N dibromo(diethyl)germane Chemical compound CC[Ge](Br)(Br)CC PWZMTDAOMOIOGV-UHFFFAOYSA-N 0.000 description 1
- ABMGRFURETYKPP-UHFFFAOYSA-N dibromo(diphenyl)germane Chemical compound C=1C=CC=CC=1[Ge](Br)(Br)C1=CC=CC=C1 ABMGRFURETYKPP-UHFFFAOYSA-N 0.000 description 1
- BWUPRNSPZFPYEK-UHFFFAOYSA-N dichloro(diethyl)germane Chemical compound CC[Ge](Cl)(Cl)CC BWUPRNSPZFPYEK-UHFFFAOYSA-N 0.000 description 1
- YQECBLVSMFAWIZ-UHFFFAOYSA-N dichloro(dimethyl)germane Chemical compound C[Ge](C)(Cl)Cl YQECBLVSMFAWIZ-UHFFFAOYSA-N 0.000 description 1
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 description 1
- PFPTYRFVUHDUIN-UHFFFAOYSA-N dichloro(diphenyl)germane Chemical compound C=1C=CC=CC=1[Ge](Cl)(Cl)C1=CC=CC=C1 PFPTYRFVUHDUIN-UHFFFAOYSA-N 0.000 description 1
- OLOAJSHVLXNSQV-UHFFFAOYSA-N diethyl(dimethyl)plumbane Chemical compound CC[Pb](C)(C)CC OLOAJSHVLXNSQV-UHFFFAOYSA-N 0.000 description 1
- SPIUPAOJDZNUJH-UHFFFAOYSA-N diethylmercury Chemical compound CC[Hg]CC SPIUPAOJDZNUJH-UHFFFAOYSA-N 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- KZLUHGRPVSRSHI-UHFFFAOYSA-N dimethylmagnesium Chemical compound C[Mg]C KZLUHGRPVSRSHI-UHFFFAOYSA-N 0.000 description 1
- ATZBPOVXVPIOMR-UHFFFAOYSA-N dimethylmercury Chemical compound C[Hg]C ATZBPOVXVPIOMR-UHFFFAOYSA-N 0.000 description 1
- QXDJFNYEWKDJJA-UHFFFAOYSA-N dimethylstannane Chemical compound C[SnH2]C QXDJFNYEWKDJJA-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- WNGVGKSMZIOFON-UHFFFAOYSA-N diphenylgermanium Chemical compound C=1C=CC=CC=1[Ge]C1=CC=CC=C1 WNGVGKSMZIOFON-UHFFFAOYSA-N 0.000 description 1
- HWMTUNCVVYPZHZ-UHFFFAOYSA-N diphenylmercury Chemical compound C=1C=CC=CC=1[Hg]C1=CC=CC=C1 HWMTUNCVVYPZHZ-UHFFFAOYSA-N 0.000 description 1
- MKRVHLWAVKJBFN-UHFFFAOYSA-N diphenylzinc Chemical compound C=1C=CC=CC=1[Zn]C1=CC=CC=C1 MKRVHLWAVKJBFN-UHFFFAOYSA-N 0.000 description 1
- UZTYYBPPVOXULF-UHFFFAOYSA-N dipropylmercury Chemical compound CCC[Hg]CCC UZTYYBPPVOXULF-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- KHQJREYATBQBHY-UHFFFAOYSA-N ethyl(trimethyl)plumbane Chemical compound CC[Pb](C)(C)C KHQJREYATBQBHY-UHFFFAOYSA-N 0.000 description 1
- VDYIOWXZMNKCHN-UHFFFAOYSA-N ethyl(trimethyl)stannane Chemical compound CC[Sn](C)(C)C VDYIOWXZMNKCHN-UHFFFAOYSA-N 0.000 description 1
- GIEAINOVPLDQPT-UHFFFAOYSA-N ethylgermanium Chemical compound CC[Ge] GIEAINOVPLDQPT-UHFFFAOYSA-N 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- DLAPQHBZCAAVPQ-UHFFFAOYSA-N iron;pentane-2,4-dione Chemical compound [Fe].CC(=O)CC(C)=O DLAPQHBZCAAVPQ-UHFFFAOYSA-N 0.000 description 1
- WRYKIHMRDIOPSI-UHFFFAOYSA-N magnesium;benzene Chemical compound [Mg+2].C1=CC=[C-]C=C1.C1=CC=[C-]C=C1 WRYKIHMRDIOPSI-UHFFFAOYSA-N 0.000 description 1
- VXWPONVCMVLXBW-UHFFFAOYSA-M magnesium;carbanide;iodide Chemical compound [CH3-].[Mg+2].[I-] VXWPONVCMVLXBW-UHFFFAOYSA-M 0.000 description 1
- DLPASUVGCQPFFO-UHFFFAOYSA-N magnesium;ethane Chemical compound [Mg+2].[CH2-]C.[CH2-]C DLPASUVGCQPFFO-UHFFFAOYSA-N 0.000 description 1
- FRIJBUGBVQZNTB-UHFFFAOYSA-M magnesium;ethane;bromide Chemical compound [Mg+2].[Br-].[CH2-]C FRIJBUGBVQZNTB-UHFFFAOYSA-M 0.000 description 1
- 125000003099 maleoyl group Chemical group C(\C=C/C(=O)*)(=O)* 0.000 description 1
- SQZZGEUJERGRIN-UHFFFAOYSA-N manganese;pentane-2,4-dione Chemical compound [Mn].CC(=O)CC(C)=O SQZZGEUJERGRIN-UHFFFAOYSA-N 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- LCTMIXFKOJXTHA-UHFFFAOYSA-N methylgermanium Chemical compound [Ge]C LCTMIXFKOJXTHA-UHFFFAOYSA-N 0.000 description 1
- JVDIOYBHEYUIBM-UHFFFAOYSA-M methylmercury(1+);iodide Chemical compound C[Hg]I JVDIOYBHEYUIBM-UHFFFAOYSA-M 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- FLESAADTDNKLFJ-UHFFFAOYSA-N nickel;pentane-2,4-dione Chemical compound [Ni].CC(=O)CC(C)=O FLESAADTDNKLFJ-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- GYUPBLLGIHQRGT-UHFFFAOYSA-N pentane-2,4-dione;titanium Chemical compound [Ti].CC(=O)CC(C)=O GYUPBLLGIHQRGT-UHFFFAOYSA-N 0.000 description 1
- 210000004303 peritoneum Anatomy 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- GCFCSMATUMXBCL-UHFFFAOYSA-N propylgermanium Chemical compound CCC[Ge] GCFCSMATUMXBCL-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- DMTMQVNOOBTJCV-UHFFFAOYSA-N tetra(propan-2-yl)plumbane Chemical compound CC(C)[Pb](C(C)C)(C(C)C)C(C)C DMTMQVNOOBTJCV-UHFFFAOYSA-N 0.000 description 1
- QQXSEZVCKAEYQJ-UHFFFAOYSA-N tetraethylgermanium Chemical compound CC[Ge](CC)(CC)CC QQXSEZVCKAEYQJ-UHFFFAOYSA-N 0.000 description 1
- RWWNQEOPUOCKGR-UHFFFAOYSA-N tetraethyltin Chemical compound CC[Sn](CC)(CC)CC RWWNQEOPUOCKGR-UHFFFAOYSA-N 0.000 description 1
- XJPKDRJZNZMJQM-UHFFFAOYSA-N tetrakis(prop-2-enyl)stannane Chemical compound C=CC[Sn](CC=C)(CC=C)CC=C XJPKDRJZNZMJQM-UHFFFAOYSA-N 0.000 description 1
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 1
- XOOGZRUBTYCLHG-UHFFFAOYSA-N tetramethyllead Chemical compound C[Pb](C)(C)C XOOGZRUBTYCLHG-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- ILEXMONMGUVLRM-UHFFFAOYSA-N tetraphenylgermane Chemical compound C1=CC=CC=C1[Ge](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 ILEXMONMGUVLRM-UHFFFAOYSA-N 0.000 description 1
- CRHIAMBJMSSNNM-UHFFFAOYSA-N tetraphenylstannane Chemical compound C1=CC=CC=C1[Sn](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 CRHIAMBJMSSNNM-UHFFFAOYSA-N 0.000 description 1
- UCTXWNCHSBFCIR-UHFFFAOYSA-N tribromo(ethyl)germane Chemical compound CC[Ge](Br)(Br)Br UCTXWNCHSBFCIR-UHFFFAOYSA-N 0.000 description 1
- VLZFWMHRXCHTLY-UHFFFAOYSA-N trichloro(ethyl)germane Chemical compound CC[Ge](Cl)(Cl)Cl VLZFWMHRXCHTLY-UHFFFAOYSA-N 0.000 description 1
- FEFXFMQVSDTSPA-UHFFFAOYSA-N trichloro(methyl)germane Chemical compound C[Ge](Cl)(Cl)Cl FEFXFMQVSDTSPA-UHFFFAOYSA-N 0.000 description 1
- ZWLAZSNDQWIQLN-UHFFFAOYSA-N triethyl(fluoro)germane Chemical compound CC[Ge](F)(CC)CC ZWLAZSNDQWIQLN-UHFFFAOYSA-N 0.000 description 1
- YMSWJBZPRYKQHJ-UHFFFAOYSA-N triethylgermanium Chemical compound CC[Ge](CC)CC YMSWJBZPRYKQHJ-UHFFFAOYSA-N 0.000 description 1
- COHOGNZHAUOXPA-UHFFFAOYSA-N trimethyl(phenyl)stannane Chemical compound C[Sn](C)(C)C1=CC=CC=C1 COHOGNZHAUOXPA-UHFFFAOYSA-N 0.000 description 1
- XRILPLAMVMGPKR-UHFFFAOYSA-N trimethyl(propyl)plumbane Chemical compound CCC[Pb](C)(C)C XRILPLAMVMGPKR-UHFFFAOYSA-N 0.000 description 1
- UKHQRARQNZOXRL-UHFFFAOYSA-N trimethyltin Chemical compound C[SnH](C)C UKHQRARQNZOXRL-UHFFFAOYSA-N 0.000 description 1
- SLAJUCLVZORTHN-UHFFFAOYSA-N triphenylgermanium Chemical compound C1=CC=CC=C1[Ge](C=1C=CC=CC=1)C1=CC=CC=C1 SLAJUCLVZORTHN-UHFFFAOYSA-N 0.000 description 1
- NFHRNKANAAGQOH-UHFFFAOYSA-N triphenylstannane Chemical compound C1=CC=CC=C1[SnH](C=1C=CC=CC=1)C1=CC=CC=C1 NFHRNKANAAGQOH-UHFFFAOYSA-N 0.000 description 1
- SKLQBHROODDCHR-UHFFFAOYSA-N trityltin Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)([Sn])C1=CC=CC=C1 SKLQBHROODDCHR-UHFFFAOYSA-N 0.000 description 1
- HEPBQSXQJMTVFI-UHFFFAOYSA-N zinc;butane Chemical compound [Zn+2].CCC[CH2-].CCC[CH2-] HEPBQSXQJMTVFI-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/733—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer characterised by the addition of non-magnetic particles
- G11B5/7334—Base layer characterised by composition or structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73923—Organic polymer substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73923—Organic polymer substrates
- G11B5/73927—Polyester substrates, e.g. polyethylene terephthalate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73923—Organic polymer substrates
- G11B5/73927—Polyester substrates, e.g. polyethylene terephthalate
- G11B5/73929—Polyester substrates, e.g. polyethylene terephthalate comprising naphthalene ring compounds, e.g. polyethylene naphthalate substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57188984A JPS5979426A (ja) | 1982-10-29 | 1982-10-29 | ç£æ°èšé²åªäœ |
| US06/529,189 US4548864A (en) | 1982-10-29 | 1983-09-06 | Magnetic recording medium having an organic metal underlayer |
| DE19833339245 DE3339245A1 (de) | 1982-10-29 | 1983-10-28 | Magnetischer aufzeichnungstraeger |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57188984A JPS5979426A (ja) | 1982-10-29 | 1982-10-29 | ç£æ°èšé²åªäœ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5979426A JPS5979426A (ja) | 1984-05-08 |
| JPH0413764B2 true JPH0413764B2 (ja) | 1992-03-10 |
Family
ID=16233349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57188984A Granted JPS5979426A (ja) | 1982-10-29 | 1982-10-29 | ç£æ°èšé²åªäœ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4548864A (ja) |
| JP (1) | JPS5979426A (ja) |
| DE (1) | DE3339245A1 (ja) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154643A (ja) * | 1983-02-24 | 1984-09-03 | Fuji Photo Film Co Ltd | ç£æ°èšé²åªäœ |
| EP0140513A1 (en) * | 1983-08-24 | 1985-05-08 | International Business Machines Corporation | Thin film magnetic recording structures |
| JPH0610856B2 (ja) * | 1984-08-04 | 1994-02-09 | ãã£ãŒãã£ãŒã±ã€æ ªåŒäŒç€Ÿ | ç£æ°èšé²åªäœ |
| JPS6179205A (ja) * | 1984-09-27 | 1986-04-22 | Kanegafuchi Chem Ind Co Ltd | åçŽç£åèããã³ãã®è£œæ³ |
| DE3577246D1 (de) * | 1984-11-20 | 1990-05-23 | Hitachi Maxell | Magnetischer aufzeichnungstraeger und herstellung derselben. |
| JPS61158025A (ja) * | 1984-12-28 | 1986-07-17 | Canon Inc | ç£æ°èšé²åªäœ |
| GB2168911B (en) * | 1984-12-29 | 1989-06-07 | Tdk Corp | Magnetic recording medium |
| JPH0711854B2 (ja) * | 1984-12-30 | 1995-02-08 | ãã£ãŒãã£ãŒã±ã€æ ªåŒäŒç€Ÿ | ç£æ°èšé²åªäœ |
| JPH0673172B2 (ja) * | 1985-08-14 | 1994-09-14 | ãã£ãŒãã£ãŒã±ã€æ ªåŒäŒç€Ÿ | ç£æ°èšé²åªäœ |
| JP2523272B2 (ja) * | 1985-08-15 | 1996-08-07 | ãã£ãŒãã£ãŒã±ã€æ ªåŒäŒç€Ÿ | ç£æ°èšé²åªäœ |
| JPS62183023A (ja) * | 1986-02-05 | 1987-08-11 | Tdk Corp | ç£æ°èšé²åªäœ |
| US4889767A (en) * | 1986-04-23 | 1989-12-26 | Tdk Corporation | Magnetic recording medium |
| US4880687A (en) * | 1986-05-09 | 1989-11-14 | Tdk Corporation | Magnetic recording medium |
| DE3773531D1 (de) * | 1986-05-14 | 1991-11-14 | Teijin Ltd | Magneto-optischer aufzeichnungstraeger. |
| US4772522A (en) * | 1986-07-21 | 1988-09-20 | Tdk Corporation | Magnetic recording medium |
| US4900622A (en) * | 1986-09-18 | 1990-02-13 | Tdk Corporation | Magnetic recording medium |
| US4897305A (en) * | 1987-03-12 | 1990-01-30 | Hercules Incorporated | Plasma treatment with organic vapors to promote a meal adhesion of polypropylene film |
| US5154978A (en) * | 1989-03-22 | 1992-10-13 | Tdk Corporation | Highly corrosion-resistant rare-earth-iron magnets |
| JP3104364B2 (ja) * | 1991-03-15 | 2000-10-30 | ãœããŒæ ªåŒäŒç€Ÿ | ãã£ãžã¿ã«ç»åä¿¡å·ã®ç£æ°èšé²æ¹æ³ |
| JPH05135344A (ja) * | 1991-05-17 | 1993-06-01 | Tdk Corp | ç£æ°èšé²åªäœ |
| DE19802740A1 (de) * | 1998-01-26 | 1999-07-29 | Leybold Systems Gmbh | Verfahren zur Behandlung von OberflÀchen von Substraten aus Kunststoff |
| US9090973B2 (en) * | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54141609A (en) * | 1978-04-26 | 1979-11-05 | Matsushita Electric Ind Co Ltd | Production of metal thin film type magnetic recording medium |
| JPS5829119A (ja) * | 1981-08-14 | 1983-02-21 | Shin Etsu Chem Co Ltd | 垯é»é²æ¢æ§ç£æ°ãâã |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1077787A (en) * | 1975-11-21 | 1980-05-20 | National Aeronautics And Space Administration | Abrasion resistant coatings for plastic surfaces |
| US4307156A (en) * | 1978-06-13 | 1981-12-22 | Nippon Electric Co., Ltd. | Magnetic record member |
| DE3117931C2 (de) * | 1980-05-06 | 1985-07-25 | Nippon Electric Co., Ltd., Tokio/Tokyo | Magnetischer AufzeichnungstrÀger und Verfahren zu seiner Herstellung |
-
1982
- 1982-10-29 JP JP57188984A patent/JPS5979426A/ja active Granted
-
1983
- 1983-09-06 US US06/529,189 patent/US4548864A/en not_active Expired - Lifetime
- 1983-10-28 DE DE19833339245 patent/DE3339245A1/de active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54141609A (en) * | 1978-04-26 | 1979-11-05 | Matsushita Electric Ind Co Ltd | Production of metal thin film type magnetic recording medium |
| JPS5829119A (ja) * | 1981-08-14 | 1983-02-21 | Shin Etsu Chem Co Ltd | 垯é»é²æ¢æ§ç£æ°ãâã |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3339245C2 (ja) | 1989-04-06 |
| US4548864A (en) | 1985-10-22 |
| JPS5979426A (ja) | 1984-05-08 |
| DE3339245A1 (de) | 1984-05-03 |
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