JPH0412032B2 - - Google Patents
Info
- Publication number
- JPH0412032B2 JPH0412032B2 JP56150607A JP15060781A JPH0412032B2 JP H0412032 B2 JPH0412032 B2 JP H0412032B2 JP 56150607 A JP56150607 A JP 56150607A JP 15060781 A JP15060781 A JP 15060781A JP H0412032 B2 JPH0412032 B2 JP H0412032B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- iil
- injection
- element section
- iil element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002347 injection Methods 0.000 claims description 65
- 239000007924 injection Substances 0.000 claims description 65
- 239000004065 semiconductor Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 24
- 239000012535 impurity Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 101150110971 CIN7 gene Proteins 0.000 description 2
- 101150110298 INV1 gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56150607A JPS5852870A (ja) | 1981-09-25 | 1981-09-25 | 半導体集積回路装置 |
FR8213878A FR2513810B1 (fr) | 1981-09-25 | 1982-08-09 | Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositif |
IT23345/82A IT1153732B (it) | 1981-09-25 | 1982-09-20 | Dispositivo circuitale integrato a semiconduttore e relativo procedimento di fabbricazione |
GB08227356A GB2106320B (en) | 1981-09-25 | 1982-09-24 | Semiconductor integrated injection logic circuit device and fabrication method thereof |
DE19823235412 DE3235412A1 (de) | 1981-09-25 | 1982-09-24 | Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung |
HK459/86A HK45986A (en) | 1981-09-25 | 1986-06-19 | Semiconductor integrated circuit device and fabrication method thereof |
MY559/86A MY8600559A (en) | 1981-09-25 | 1986-12-30 | Semiconductor integrated circuit device and fabrication method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56150607A JPS5852870A (ja) | 1981-09-25 | 1981-09-25 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5852870A JPS5852870A (ja) | 1983-03-29 |
JPH0412032B2 true JPH0412032B2 (es) | 1992-03-03 |
Family
ID=15500577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56150607A Granted JPS5852870A (ja) | 1981-09-25 | 1981-09-25 | 半導体集積回路装置 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5852870A (es) |
DE (1) | DE3235412A1 (es) |
FR (1) | FR2513810B1 (es) |
GB (1) | GB2106320B (es) |
HK (1) | HK45986A (es) |
IT (1) | IT1153732B (es) |
MY (1) | MY8600559A (es) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS616079A (ja) * | 1984-06-19 | 1986-01-11 | Fukuyama Gomme Kogyo Kk | 弾性体クロ−ラ |
JPS6267851A (ja) * | 1985-09-20 | 1987-03-27 | Hitachi Ltd | 半導体集積回路装置 |
JPH0715830Y2 (ja) * | 1989-01-13 | 1995-04-12 | オーツタイヤ株式会社 | クローラ用弾性履帯 |
JPH0562396U (ja) * | 1992-05-18 | 1993-08-20 | 福山ゴム工業株式会社 | ゴムクローラ |
JP2008205418A (ja) * | 2007-02-19 | 2008-09-04 | Mikio Shimoyama | いつでもスイッチ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55127060A (en) * | 1979-03-24 | 1980-10-01 | Mitsubishi Electric Corp | Iil integrated circuit |
JPS5635460A (en) * | 1979-08-29 | 1981-04-08 | Nec Corp | Logic circuit using integrated injection type logic element |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50124674A (es) * | 1974-02-19 | 1975-09-30 | ||
DE2624584A1 (de) * | 1976-06-01 | 1977-12-15 | Siemens Ag | Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen |
NL7614610A (nl) * | 1976-12-31 | 1978-07-04 | Philips Nv | Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor. |
NL7700420A (nl) * | 1977-01-17 | 1978-07-19 | Philips Nv | Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan. |
DE2722667C2 (de) * | 1977-05-18 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Halbleiterschaltung mit Invertern vom I↑2↑ L-Typ |
FR2404962A1 (fr) * | 1977-09-28 | 1979-04-27 | Ibm France | Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur |
DE2837519A1 (de) * | 1978-08-28 | 1980-03-20 | Philips Patentverwaltung | Monolithische integrierte halbleiter- schaltungsanordnung |
JPS55134962A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device |
-
1981
- 1981-09-25 JP JP56150607A patent/JPS5852870A/ja active Granted
-
1982
- 1982-08-09 FR FR8213878A patent/FR2513810B1/fr not_active Expired
- 1982-09-20 IT IT23345/82A patent/IT1153732B/it active
- 1982-09-24 GB GB08227356A patent/GB2106320B/en not_active Expired
- 1982-09-24 DE DE19823235412 patent/DE3235412A1/de not_active Withdrawn
-
1986
- 1986-06-19 HK HK459/86A patent/HK45986A/xx unknown
- 1986-12-30 MY MY559/86A patent/MY8600559A/xx unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55127060A (en) * | 1979-03-24 | 1980-10-01 | Mitsubishi Electric Corp | Iil integrated circuit |
JPS5635460A (en) * | 1979-08-29 | 1981-04-08 | Nec Corp | Logic circuit using integrated injection type logic element |
Also Published As
Publication number | Publication date |
---|---|
JPS5852870A (ja) | 1983-03-29 |
HK45986A (en) | 1986-06-27 |
IT8223345A0 (it) | 1982-09-20 |
MY8600559A (en) | 1986-12-31 |
FR2513810A1 (fr) | 1983-04-01 |
GB2106320A (en) | 1983-04-07 |
FR2513810B1 (fr) | 1986-06-27 |
GB2106320B (en) | 1985-07-10 |
DE3235412A1 (de) | 1983-05-26 |
IT1153732B (it) | 1987-01-14 |
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