JPH0411023B2 - - Google Patents

Info

Publication number
JPH0411023B2
JPH0411023B2 JP58242038A JP24203883A JPH0411023B2 JP H0411023 B2 JPH0411023 B2 JP H0411023B2 JP 58242038 A JP58242038 A JP 58242038A JP 24203883 A JP24203883 A JP 24203883A JP H0411023 B2 JPH0411023 B2 JP H0411023B2
Authority
JP
Japan
Prior art keywords
photoresist
film
polyamic acid
fine pattern
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58242038A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60134236A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58242038A priority Critical patent/JPS60134236A/ja
Publication of JPS60134236A publication Critical patent/JPS60134236A/ja
Publication of JPH0411023B2 publication Critical patent/JPH0411023B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58242038A 1983-12-23 1983-12-23 微細パタ−ン形成法 Granted JPS60134236A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58242038A JPS60134236A (ja) 1983-12-23 1983-12-23 微細パタ−ン形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58242038A JPS60134236A (ja) 1983-12-23 1983-12-23 微細パタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS60134236A JPS60134236A (ja) 1985-07-17
JPH0411023B2 true JPH0411023B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-02-27

Family

ID=17083346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58242038A Granted JPS60134236A (ja) 1983-12-23 1983-12-23 微細パタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS60134236A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156044A (ja) * 1984-12-27 1986-07-15 Nec Corp レジストステンシルマスクの製造方法
JP2541930B2 (ja) * 1986-04-09 1996-10-09 沖電気工業株式会社 単結晶薄膜の形成方法
JPH0721642B2 (ja) * 1986-06-19 1995-03-08 宇部興産株式会社 感光性ポリイミドのパタ−ン形成方法
JPS6461746A (en) * 1987-09-02 1989-03-08 Hitachi Ltd Heat-resisting photosensitive polymer composition
JP2503103B2 (ja) * 1990-09-25 1996-06-05 東レ株式会社 感光性ポリイミド用現像液
WO2025183117A1 (ja) * 2024-03-01 2025-09-04 旭化成株式会社 ネガ型感光性樹脂組成物及び硬化レリーフパターンの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method

Also Published As

Publication number Publication date
JPS60134236A (ja) 1985-07-17

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