JPH0380723B2 - - Google Patents
Info
- Publication number
- JPH0380723B2 JPH0380723B2 JP59108270A JP10827084A JPH0380723B2 JP H0380723 B2 JPH0380723 B2 JP H0380723B2 JP 59108270 A JP59108270 A JP 59108270A JP 10827084 A JP10827084 A JP 10827084A JP H0380723 B2 JPH0380723 B2 JP H0380723B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- silicon
- filament
- enclosure
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 138
- 229910052710 silicon Inorganic materials 0.000 claims description 138
- 239000010703 silicon Substances 0.000 claims description 138
- 229910045601 alloy Inorganic materials 0.000 claims description 102
- 239000000956 alloy Substances 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 49
- 238000012546 transfer Methods 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 claims description 23
- 229910021360 copper silicide Inorganic materials 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 229910000039 hydrogen halide Inorganic materials 0.000 claims 3
- 239000012433 hydrogen halide Substances 0.000 claims 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 18
- 229910002804 graphite Inorganic materials 0.000 description 18
- 239000010439 graphite Substances 0.000 description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 238000002474 experimental method Methods 0.000 description 14
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 13
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 13
- 239000012535 impurity Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 9
- 239000005052 trichlorosilane Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002848 electrochemical method Methods 0.000 description 3
- -1 hydrogen halides Chemical class 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004677 spark ionization mass spectrometry Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
- C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/498,999 US4481232A (en) | 1983-05-27 | 1983-05-27 | Method and apparatus for producing high purity silicon |
| US498999 | 1983-05-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6036317A JPS6036317A (ja) | 1985-02-25 |
| JPH0380723B2 true JPH0380723B2 (enExample) | 1991-12-25 |
Family
ID=23983374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59108270A Granted JPS6036317A (ja) | 1983-05-27 | 1984-05-28 | 高純度シリコンの製造方法およびその装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4481232A (enExample) |
| JP (1) | JPS6036317A (enExample) |
| CA (1) | CA1207985A (enExample) |
| DE (1) | DE3419656A1 (enExample) |
| FR (1) | FR2547571B1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
| US4970986A (en) * | 1989-08-03 | 1990-11-20 | General Electric Company | Apparatus for synthetic diamond deposition including spring-tensioned filaments |
| US5079038A (en) * | 1990-10-05 | 1992-01-07 | The United States Of America As Represented By The United States Department Of Energy | Hot filament CVD of boron nitride films |
| US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
| US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
| JP2002270346A (ja) * | 2001-03-09 | 2002-09-20 | Mitsubishi Heavy Ind Ltd | 加熱装置及びその製造方法並びに被膜形成装置 |
| EP1772429A4 (en) * | 2004-06-22 | 2010-01-06 | Shin Etsu Film Co Ltd | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON FOR SOLAR CELLS MADE ACCORDING TO THE PROCESS |
| EP1999286B1 (en) * | 2006-03-10 | 2017-04-19 | Elkem AS | Method for electrolytic production and refining of silicon |
| US7901561B2 (en) * | 2006-03-10 | 2011-03-08 | Elkem As | Method for electrolytic production and refining of metals |
| US9683286B2 (en) * | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
| US7935327B2 (en) * | 2006-08-30 | 2011-05-03 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
| JP2008116291A (ja) * | 2006-11-02 | 2008-05-22 | Ntn Corp | 回転検出装置および回転検出装置付き軸受 |
| WO2008066027A1 (fr) * | 2006-11-29 | 2008-06-05 | Mitsubishi Materials Corporation | Appareil de fabrication de trichlorosilane |
| JP5119856B2 (ja) * | 2006-11-29 | 2013-01-16 | 三菱マテリアル株式会社 | トリクロロシラン製造装置 |
| TWI494458B (zh) * | 2008-03-26 | 2015-08-01 | Gtat Corp | 在化學氣相沉積反應器中用於配氣之系統和方法 |
| WO2009128886A1 (en) * | 2008-04-14 | 2009-10-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
| US8951352B2 (en) * | 2008-04-14 | 2015-02-10 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
| CN102047750B (zh) * | 2008-04-14 | 2013-11-06 | 赫姆洛克半导体公司 | 用于沉积材料的制造设备和其中使用的电极 |
| WO2010074673A1 (en) * | 2008-12-23 | 2010-07-01 | Arise Technologies Corporation | Method and apparatus for the production of chlorosilanes |
| WO2010074674A1 (en) * | 2008-12-23 | 2010-07-01 | Arise Technologies Corporation | Method and apparatus for silicon refinement |
| WO2011075836A1 (en) * | 2009-12-23 | 2011-06-30 | Arise Technologies Corporation | Producing transport gas for vapour deposition from eutectic and hypo-eutectic metal-silicon alloy |
| DE102013201608A1 (de) | 2013-01-31 | 2014-07-31 | Wacker Chemie Ag | Verfahren zur Abscheidung von polykristallinem Silicium |
| JP6570329B2 (ja) | 2015-06-12 | 2019-09-04 | スリーエム イノベイティブ プロパティズ カンパニー | 粘着層と剥離層とを備えた物品 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2499009A (en) * | 1947-02-15 | 1950-02-28 | Linde Air Prod Co | Chlorosilanes |
| DE1054436B (de) * | 1956-02-11 | 1959-04-09 | Pechiney Prod Chimiques Sa | Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades |
| NL124690C (enExample) * | 1958-05-29 |
-
1983
- 1983-05-27 US US06/498,999 patent/US4481232A/en not_active Expired - Fee Related
-
1984
- 1984-05-16 CA CA000454493A patent/CA1207985A/en not_active Expired
- 1984-05-24 FR FR8408138A patent/FR2547571B1/fr not_active Expired
- 1984-05-25 DE DE19843419656 patent/DE3419656A1/de not_active Withdrawn
- 1984-05-28 JP JP59108270A patent/JPS6036317A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6036317A (ja) | 1985-02-25 |
| US4481232A (en) | 1984-11-06 |
| FR2547571A1 (fr) | 1984-12-21 |
| DE3419656A1 (de) | 1985-01-10 |
| CA1207985A (en) | 1986-07-22 |
| FR2547571B1 (fr) | 1987-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0380723B2 (enExample) | ||
| CA1074428A (en) | Process for producing large-size substrate-based semiconductor material | |
| US7977220B2 (en) | Substrates for silicon solar cells and methods of producing the same | |
| US5961944A (en) | Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell | |
| CN101405437B (zh) | 应用混合芯构件制备高纯硅棒的装置和方法 | |
| JP4580939B2 (ja) | 太陽電池用のシリコン供給原料 | |
| JP2009538265A (ja) | 金属コア手段を使用した高純度多結晶シリコン棒の製造方法 | |
| US7732012B2 (en) | Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method | |
| CN101018877B (zh) | 精制金属的方法 | |
| US4448651A (en) | Process for producing silicon | |
| Dietl et al. | “Solar” silicon | |
| RU2155158C1 (ru) | Способ получения моноизотопного кремния si28 | |
| Mason | Growth and characterization of transition metal silicides | |
| US20050032370A1 (en) | Graphite material for synthesizing semiconductor diamond and semiconductor diamond produced by using the same | |
| US8173094B2 (en) | Method for producing polycrystalline silicon | |
| CN102227374B (zh) | n型太阳能电池用硅及添加有磷的硅的制造方法 | |
| JP2001199792A (ja) | シリコン２８の純度が高いシリコンインゴット及びウエハ | |
| EP2187461A1 (en) | Process for producing fine thermoelectric element, the fine thermoelectric element, and product employing the fine thermoelectric element | |
| KR101096178B1 (ko) | 다결정 실리콘의 제조장치에 사용되는 불순물 방지막이있는 금속 심재 | |
| US20240044019A1 (en) | A method of producing silicon | |
| Ugai et al. | Methods of Preparation of α-Rhombohedral Boron | |
| UGAI et al. | III. Methods of Preparation of a-Rhombohedral Boron | |
| Rustioni et al. | Solar silicon from directional solidification of MG silicon produced via the silicon carbide route | |
| CN101346309A (zh) | 多晶硅的制造方法 | |
| Zweibel | Silicon Cells: Conventional Processing |