JPH0379799B2 - - Google Patents
Info
- Publication number
- JPH0379799B2 JPH0379799B2 JP57163887A JP16388782A JPH0379799B2 JP H0379799 B2 JPH0379799 B2 JP H0379799B2 JP 57163887 A JP57163887 A JP 57163887A JP 16388782 A JP16388782 A JP 16388782A JP H0379799 B2 JPH0379799 B2 JP H0379799B2
- Authority
- JP
- Japan
- Prior art keywords
- address
- signal
- timing signal
- column
- decoder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000872 buffer Substances 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 238000003491 array Methods 0.000 description 7
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57163887A JPS5954096A (ja) | 1982-09-22 | 1982-09-22 | ダイナミツク型mosram |
KR1019830003037A KR840005885A (ko) | 1982-09-22 | 1983-07-04 | 다이나믹형 mosram |
FR838312878A FR2533349B1 (fr) | 1982-09-22 | 1983-08-04 | Memoire mosram de type dynamique |
GB08324526A GB2127596A (en) | 1982-09-22 | 1983-09-13 | Dynamic type MOSRAM |
DE19833333974 DE3333974A1 (de) | 1982-09-22 | 1983-09-20 | Dynamischer mos-speicher mit wahlfreiem zugriff |
IT22952/83A IT1168282B (it) | 1982-09-22 | 1983-09-21 | Memoria ad accesso casuale di tipo mos |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57163887A JPS5954096A (ja) | 1982-09-22 | 1982-09-22 | ダイナミツク型mosram |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5954096A JPS5954096A (ja) | 1984-03-28 |
JPH0379799B2 true JPH0379799B2 (ko) | 1991-12-19 |
Family
ID=15782682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57163887A Granted JPS5954096A (ja) | 1982-09-22 | 1982-09-22 | ダイナミツク型mosram |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5954096A (ko) |
KR (1) | KR840005885A (ko) |
DE (1) | DE3333974A1 (ko) |
FR (1) | FR2533349B1 (ko) |
GB (1) | GB2127596A (ko) |
IT (1) | IT1168282B (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3427454A1 (de) * | 1984-07-25 | 1986-01-30 | Siemens AG, 1000 Berlin und 8000 München | Integrierte schaltung fuer einen in komplementaerer schaltungstechnik aufgebauten dynamischen halbleiterspeicher |
JPS6212991A (ja) * | 1985-07-10 | 1987-01-21 | Fujitsu Ltd | 半導体記憶装置 |
US4792929A (en) * | 1987-03-23 | 1988-12-20 | Zenith Electronics Corporation | Data processing system with extended memory access |
US5173878A (en) * | 1987-11-25 | 1992-12-22 | Kabushiki Kaisha Toshiba | Semiconductor memory including address multiplexing circuitry for changing the order of supplying row and column addresses between read and write cycles |
KR930008838A (ko) * | 1991-10-31 | 1993-05-22 | 김광호 | 어드레스 입력 버퍼 |
KR0120592B1 (ko) * | 1994-09-09 | 1997-10-20 | 김주용 | 신호 변환 장치를 갖고 있는 어드레스 입력버퍼 |
KR0145852B1 (ko) * | 1995-04-14 | 1998-11-02 | 김광호 | 반도체메모리소자의 어드레스버퍼 |
GB9902561D0 (en) * | 1999-02-06 | 1999-03-24 | Mitel Semiconductor Ltd | Synchronous memory |
KR102465540B1 (ko) | 2017-05-18 | 2022-11-11 | 삼성전자주식회사 | 약액 공급 장치 및 이를 구비하는 반도체 처리 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5325324A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Address selection system |
JPS5381021A (en) * | 1976-12-27 | 1978-07-18 | Nippon Telegr & Teleph Corp <Ntt> | Address input circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5575899U (ko) * | 1978-11-20 | 1980-05-24 | ||
JPS57118599U (ko) * | 1981-01-14 | 1982-07-23 | ||
US4541078A (en) * | 1982-12-22 | 1985-09-10 | At&T Bell Laboratories | Memory using multiplexed row and column address lines |
-
1982
- 1982-09-22 JP JP57163887A patent/JPS5954096A/ja active Granted
-
1983
- 1983-07-04 KR KR1019830003037A patent/KR840005885A/ko not_active Application Discontinuation
- 1983-08-04 FR FR838312878A patent/FR2533349B1/fr not_active Expired - Lifetime
- 1983-09-13 GB GB08324526A patent/GB2127596A/en not_active Withdrawn
- 1983-09-20 DE DE19833333974 patent/DE3333974A1/de not_active Withdrawn
- 1983-09-21 IT IT22952/83A patent/IT1168282B/it active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5325324A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Address selection system |
JPS5381021A (en) * | 1976-12-27 | 1978-07-18 | Nippon Telegr & Teleph Corp <Ntt> | Address input circuit |
Also Published As
Publication number | Publication date |
---|---|
IT8322952A1 (it) | 1985-03-21 |
KR840005885A (ko) | 1984-11-19 |
GB8324526D0 (en) | 1983-10-12 |
DE3333974A1 (de) | 1984-03-22 |
IT8322952A0 (it) | 1983-09-21 |
FR2533349B1 (fr) | 1991-09-06 |
JPS5954096A (ja) | 1984-03-28 |
GB2127596A (en) | 1984-04-11 |
IT1168282B (it) | 1987-05-20 |
FR2533349A1 (fr) | 1984-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6453400B1 (en) | Semiconductor integrated circuit device | |
USRE36089E (en) | Column selecting circuit in semiconductor memory device | |
US6735144B2 (en) | Semiconductor integrated circuit device | |
US5862095A (en) | Semiconductor memory having both a refresh operation cycle and a normal operation cycle and employing an address non-multiplex system | |
US5818785A (en) | Semiconductor memory device having a plurality of banks | |
US5590084A (en) | Semiconductor memory device having a column selector | |
US6243279B1 (en) | Semiconductor integrated circuit device | |
US7035161B2 (en) | Semiconductor integrated circuit | |
JP2560020B2 (ja) | 半導体記憶装置 | |
KR0135085B1 (ko) | 메모리장치 | |
JPH09265775A (ja) | 半導体記憶装置 | |
US6339817B1 (en) | Semiconductor memory including main and sub memory portions having plural memory cell groups and a bidirectional data transfer circuit | |
US4763302A (en) | Alternatively addressed semiconductor memory array | |
US5621679A (en) | Semiconductor memory device for achieving high bandwidth and method for arranging signal lines therefor | |
EP1887582A2 (en) | Semiconductor memory with redundant rows and columns and a flexible redundancy architecture | |
JP2001250385A (ja) | 半導体記憶装置 | |
KR970051152A (ko) | 고속 버스트 리드/라이트 동작에 적합한 데이타 버스 라인 구조를 갖는 반도체 메모리 장치 | |
JP2006147145A (ja) | 半導体メモリ装置の配置方法 | |
US4837743A (en) | Architecture for memory multiplexing | |
US6788600B2 (en) | Non-volatile semiconductor memory | |
JPH0379799B2 (ko) | ||
JP2712128B2 (ja) | 半導体記憶装置 | |
JPS6381688A (ja) | 半導体記憶装置 | |
KR960001859B1 (ko) | 반도체 메모리장치의 디코딩회로 및 그 방법 | |
KR100301039B1 (ko) | 칼럼선택선신호를제어하여데이터를마스킹하는반도체메모리장치및이의칼럼디코더 |