JPH0377596B2 - - Google Patents
Info
- Publication number
- JPH0377596B2 JPH0377596B2 JP58118341A JP11834183A JPH0377596B2 JP H0377596 B2 JPH0377596 B2 JP H0377596B2 JP 58118341 A JP58118341 A JP 58118341A JP 11834183 A JP11834183 A JP 11834183A JP H0377596 B2 JPH0377596 B2 JP H0377596B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- mosfet
- pair
- sense amplifier
- complementary data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000000295 complement effect Effects 0.000 claims description 66
- 239000003990 capacitor Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000003708 edge detection Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58118341A JPS6013394A (ja) | 1983-07-01 | 1983-07-01 | Mos記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58118341A JPS6013394A (ja) | 1983-07-01 | 1983-07-01 | Mos記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6013394A JPS6013394A (ja) | 1985-01-23 |
JPH0377596B2 true JPH0377596B2 (ko) | 1991-12-11 |
Family
ID=14734276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58118341A Granted JPS6013394A (ja) | 1983-07-01 | 1983-07-01 | Mos記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6013394A (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4694205A (en) * | 1985-06-03 | 1987-09-15 | Advanced Micro Devices, Inc. | Midpoint sense amplification scheme for a CMOS DRAM |
JPS6240695A (ja) * | 1985-08-16 | 1987-02-21 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS6252790A (ja) * | 1985-08-30 | 1987-03-07 | Toshiba Corp | 半導体メモリのセンスアンプ系 |
-
1983
- 1983-07-01 JP JP58118341A patent/JPS6013394A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6013394A (ja) | 1985-01-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4660180A (en) | Semiconductor memory device including an improved data refreshing arrangement and a system employing the same | |
JPH0787034B2 (ja) | 半導体集積回路装置 | |
US6522592B2 (en) | Sense amplifier for reduction of access device leakage | |
US4564925A (en) | Semiconductor memory | |
CN110326044B (zh) | 输入缓冲器电路 | |
US4734889A (en) | Semiconductor memory | |
JPH0459714B2 (ko) | ||
JPH0377596B2 (ko) | ||
US6781894B2 (en) | Semiconductor memory device achieving fast random access | |
JPH0379798B2 (ko) | ||
JPS60242587A (ja) | ダイナミツク型ram | |
JP2555322B2 (ja) | ダイナミツク型ram | |
JPS60211695A (ja) | 半導体集積回路装置 | |
JPS60211696A (ja) | ダイナミツク型ram | |
JPS60211692A (ja) | 半導体記憶装置 | |
JPH0350358B2 (ko) | ||
JPH0812759B2 (ja) | ダイナミック型ram | |
JPS6129488A (ja) | ダイナミツク型ram | |
JPH0612617B2 (ja) | 擬似スタティックram | |
JPS61237293A (ja) | 半導体記憶装置 | |
JPS60136418A (ja) | 半導体集積回路装置 | |
JPS60136094A (ja) | Mos記憶装置 | |
JPS6117295A (ja) | 半導体記憶装置 | |
JPS60242586A (ja) | 半導体集積回路装置 | |
JPS59188886A (ja) | Mos記憶装置 |