JPH0376577B2 - - Google Patents

Info

Publication number
JPH0376577B2
JPH0376577B2 JP57226527A JP22652782A JPH0376577B2 JP H0376577 B2 JPH0376577 B2 JP H0376577B2 JP 57226527 A JP57226527 A JP 57226527A JP 22652782 A JP22652782 A JP 22652782A JP H0376577 B2 JPH0376577 B2 JP H0376577B2
Authority
JP
Japan
Prior art keywords
thin film
silicon
etching
group
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57226527A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59119763A (ja
Inventor
Ichiro Moryama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57226527A priority Critical patent/JPS59119763A/ja
Publication of JPS59119763A publication Critical patent/JPS59119763A/ja
Publication of JPH0376577B2 publication Critical patent/JPH0376577B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates

Landscapes

  • Drying Of Semiconductors (AREA)
JP57226527A 1982-12-25 1982-12-25 薄膜ｍｉｓトランジスタの形成方法 Granted JPS59119763A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226527A JPS59119763A (ja) 1982-12-25 1982-12-25 薄膜ｍｉｓトランジスタの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226527A JPS59119763A (ja) 1982-12-25 1982-12-25 薄膜ｍｉｓトランジスタの形成方法

Publications (2)

Publication Number Publication Date
JPS59119763A JPS59119763A (ja) 1984-07-11
JPH0376577B2 true JPH0376577B2 (enrdf_load_html_response) 1991-12-05

Family

ID=16846523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226527A Granted JPS59119763A (ja) 1982-12-25 1982-12-25 薄膜ｍｉｓトランジスタの形成方法

Country Status (1)

Country Link
JP (1) JPS59119763A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2782342B2 (ja) * 1988-05-10 1998-07-30 大成建設株式会社 環境調節施設
JP2522041B2 (ja) * 1989-04-21 1996-08-07 富士電機株式会社 プラズマエッチング方法

Also Published As

Publication number Publication date
JPS59119763A (ja) 1984-07-11

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