JPH0531825B2 - - Google Patents
Info
- Publication number
- JPH0531825B2 JPH0531825B2 JP60235757A JP23575785A JPH0531825B2 JP H0531825 B2 JPH0531825 B2 JP H0531825B2 JP 60235757 A JP60235757 A JP 60235757A JP 23575785 A JP23575785 A JP 23575785A JP H0531825 B2 JPH0531825 B2 JP H0531825B2
- Authority
- JP
- Japan
- Prior art keywords
- trench
- silicon
- deposited
- film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23575785A JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23575785A JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6294955A JPS6294955A (ja) | 1987-05-01 |
JPH0531825B2 true JPH0531825B2 (enrdf_load_html_response) | 1993-05-13 |
Family
ID=16990781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23575785A Granted JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6294955A (enrdf_load_html_response) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105431376B (zh) * | 2013-07-26 | 2018-08-31 | 3M创新有限公司 | 制备纳米结构和纳米结构化制品的方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5513904A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Semiconductor device and its manufacturing method |
-
1985
- 1985-10-21 JP JP23575785A patent/JPS6294955A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6294955A (ja) | 1987-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5304510A (en) | Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited | |
KR100319185B1 (ko) | 반도체 장치의 절연막 형성 방법 | |
US5578524A (en) | Fabrication process of a semiconductor device with a wiring structure | |
KR100536604B1 (ko) | 고밀도 플라즈마 증착법을 이용한 갭필 방법 | |
JP3278562B2 (ja) | 半導体装置の製造方法 | |
US20020052119A1 (en) | In-situ flowing bpsg gap fill process using hdp | |
JP4345875B2 (ja) | 半導体素子のコンタクトプラグ形成方法 | |
JPH02304947A (ja) | 半導体デバイスの製造方法 | |
US6818537B2 (en) | Method of manufacturing a contact plug for a semiconductor device | |
JPH11340463A (ja) | 半導体材料を高融点金属に変換する方法及び前記方法を利用して製造されるmos装置 | |
CA1208805A (en) | Vertically isolated complementary transistors | |
EP0437371B1 (en) | Method of manufacturing semiconductor device | |
US6720233B2 (en) | Process for producing trench insulation in a substrate | |
CN116053298B (zh) | 一种半导体器件的制作方法 | |
JPH0531825B2 (enrdf_load_html_response) | ||
KR100524802B1 (ko) | 이중 선택적 에피택셜 성장법을 이용한 콘택플러그를 갖는반도체소자 및 그의 제조 방법 | |
KR100505629B1 (ko) | 트렌치 매립 방법 | |
JP2702007B2 (ja) | 半導体装置の製造方法 | |
KR100440260B1 (ko) | 반도체 소자의 비트라인 형성 방법 | |
KR100295671B1 (ko) | 반도체소자의격리방법 | |
JPH01129439A (ja) | 半導体装置の製造方法 | |
KR100376258B1 (ko) | 반도체 소자의 플러그 형성 방법 | |
KR20020010816A (ko) | 반도체소자의 콘택 형성 방법 | |
JP3057511B2 (ja) | 凹部の埋め込み工程を有する半導体装置の製造方法 | |
KR100743619B1 (ko) | 반도체장치의 트렌치 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |