JPH037142B2 - - Google Patents

Info

Publication number
JPH037142B2
JPH037142B2 JP58041673A JP4167383A JPH037142B2 JP H037142 B2 JPH037142 B2 JP H037142B2 JP 58041673 A JP58041673 A JP 58041673A JP 4167383 A JP4167383 A JP 4167383A JP H037142 B2 JPH037142 B2 JP H037142B2
Authority
JP
Japan
Prior art keywords
pad
output
buffer
drain region
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58041673A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59167049A (ja
Inventor
Fusao Tsubokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58041673A priority Critical patent/JPS59167049A/ja
Priority to US06/589,371 priority patent/US4631571A/en
Publication of JPS59167049A publication Critical patent/JPS59167049A/ja
Publication of JPH037142B2 publication Critical patent/JPH037142B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/90—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/998—Input and output buffer/driver structures
    • H10W20/427—
    • H10W72/952—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58041673A 1983-03-14 1983-03-14 半導体装置 Granted JPS59167049A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58041673A JPS59167049A (ja) 1983-03-14 1983-03-14 半導体装置
US06/589,371 US4631571A (en) 1983-03-14 1984-03-14 Semiconductor device for use in a large scale integration circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58041673A JPS59167049A (ja) 1983-03-14 1983-03-14 半導体装置

Publications (2)

Publication Number Publication Date
JPS59167049A JPS59167049A (ja) 1984-09-20
JPH037142B2 true JPH037142B2 (enExample) 1991-01-31

Family

ID=12614918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58041673A Granted JPS59167049A (ja) 1983-03-14 1983-03-14 半導体装置

Country Status (2)

Country Link
US (1) US4631571A (enExample)
JP (1) JPS59167049A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
JP2710953B2 (ja) * 1988-06-29 1998-02-10 株式会社日立製作所 半導体装置
US5300796A (en) * 1988-06-29 1994-04-05 Hitachi, Ltd. Semiconductor device having an internal cell array region and a peripheral region surrounding the internal cell array for providing input/output basic cells
KR950012657B1 (en) * 1991-01-22 1995-10-19 Nec Co Ltd Resin sealed semiconductor integrated circuit
WO1996015553A1 (en) * 1994-11-15 1996-05-23 Advanced Micro Devices, Inc. Transistor structure with specific gate and pad areas
US5598009A (en) * 1994-11-15 1997-01-28 Advanced Micro Devices, Inc. Hot carrier injection test structure and testing technique for statistical evaluation
JP4817418B2 (ja) * 2005-01-31 2011-11-16 オンセミコンダクター・トレーディング・リミテッド 回路装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1527430A (fr) * 1966-06-15 1968-05-31 Itt Structure d'émetteur pour transistor de puissance
US3652906A (en) * 1970-03-24 1972-03-28 Alton O Christensen Mosfet decoder topology
US3878550A (en) * 1972-10-27 1975-04-15 Raytheon Co Microwave power transistor
JPS5236470A (en) * 1975-09-17 1977-03-19 Matsushita Electronics Corp Semiconductor unit
JPS5844743A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体集積回路
US4511914A (en) * 1982-07-01 1985-04-16 Motorola, Inc. Power bus routing for providing noise isolation in gate arrays
US4568961A (en) * 1983-03-11 1986-02-04 Rca Corporation Variable geometry automated universal array

Also Published As

Publication number Publication date
US4631571A (en) 1986-12-23
JPS59167049A (ja) 1984-09-20

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