JPH0365893B2 - - Google Patents
Info
- Publication number
- JPH0365893B2 JPH0365893B2 JP59247111A JP24711184A JPH0365893B2 JP H0365893 B2 JPH0365893 B2 JP H0365893B2 JP 59247111 A JP59247111 A JP 59247111A JP 24711184 A JP24711184 A JP 24711184A JP H0365893 B2 JPH0365893 B2 JP H0365893B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- layer
- forming
- gate
- developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59247111A JPS61125176A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59247111A JPS61125176A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61125176A JPS61125176A (ja) | 1986-06-12 |
| JPH0365893B2 true JPH0365893B2 (enExample) | 1991-10-15 |
Family
ID=17158596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59247111A Granted JPS61125176A (ja) | 1984-11-22 | 1984-11-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61125176A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0793429B2 (ja) * | 1986-06-19 | 1995-10-09 | 富士通株式会社 | 半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55105326A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electronics Corp | Manufacturing method of electrode of semiconductor device |
| US4283483A (en) * | 1979-07-19 | 1981-08-11 | Hughes Aircraft Company | Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles |
| JPS58199567A (ja) * | 1982-05-17 | 1983-11-19 | Toshiba Corp | シヨツトキ障壁型電界効果トランジスタ及びその製造方法 |
-
1984
- 1984-11-22 JP JP59247111A patent/JPS61125176A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61125176A (ja) | 1986-06-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |