JPH0365893B2 - - Google Patents

Info

Publication number
JPH0365893B2
JPH0365893B2 JP59247111A JP24711184A JPH0365893B2 JP H0365893 B2 JPH0365893 B2 JP H0365893B2 JP 59247111 A JP59247111 A JP 59247111A JP 24711184 A JP24711184 A JP 24711184A JP H0365893 B2 JPH0365893 B2 JP H0365893B2
Authority
JP
Japan
Prior art keywords
photoresist
layer
forming
gate
developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59247111A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61125176A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59247111A priority Critical patent/JPS61125176A/ja
Publication of JPS61125176A publication Critical patent/JPS61125176A/ja
Publication of JPH0365893B2 publication Critical patent/JPH0365893B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59247111A 1984-11-22 1984-11-22 半導体装置の製造方法 Granted JPS61125176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59247111A JPS61125176A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59247111A JPS61125176A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61125176A JPS61125176A (ja) 1986-06-12
JPH0365893B2 true JPH0365893B2 (enExample) 1991-10-15

Family

ID=17158596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59247111A Granted JPS61125176A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61125176A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793429B2 (ja) * 1986-06-19 1995-10-09 富士通株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105326A (en) * 1979-02-07 1980-08-12 Matsushita Electronics Corp Manufacturing method of electrode of semiconductor device
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles
JPS58199567A (ja) * 1982-05-17 1983-11-19 Toshiba Corp シヨツトキ障壁型電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPS61125176A (ja) 1986-06-12

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