JPS61125176A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61125176A
JPS61125176A JP59247111A JP24711184A JPS61125176A JP S61125176 A JPS61125176 A JP S61125176A JP 59247111 A JP59247111 A JP 59247111A JP 24711184 A JP24711184 A JP 24711184A JP S61125176 A JPS61125176 A JP S61125176A
Authority
JP
Japan
Prior art keywords
photoresist
gate
layer
forming
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59247111A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0365893B2 (enExample
Inventor
Hiroaki Ishiuchi
石内　宏明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59247111A priority Critical patent/JPS61125176A/ja
Publication of JPS61125176A publication Critical patent/JPS61125176A/ja
Publication of JPH0365893B2 publication Critical patent/JPH0365893B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59247111A 1984-11-22 1984-11-22 半導体装置の製造方法 Granted JPS61125176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59247111A JPS61125176A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59247111A JPS61125176A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61125176A true JPS61125176A (ja) 1986-06-12
JPH0365893B2 JPH0365893B2 (enExample) 1991-10-15

Family

ID=17158596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59247111A Granted JPS61125176A (ja) 1984-11-22 1984-11-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61125176A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171A (ja) * 1986-06-19 1988-01-05 Fujitsu Ltd 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105326A (en) * 1979-02-07 1980-08-12 Matsushita Electronics Corp Manufacturing method of electrode of semiconductor device
JPS5618421A (en) * 1979-07-19 1981-02-21 Hughes Aircraft Co Method of manufacturing semiconductor device using electron beam
JPS58199567A (ja) * 1982-05-17 1983-11-19 Toshiba Corp シヨツトキ障壁型電界効果トランジスタ及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105326A (en) * 1979-02-07 1980-08-12 Matsushita Electronics Corp Manufacturing method of electrode of semiconductor device
JPS5618421A (en) * 1979-07-19 1981-02-21 Hughes Aircraft Co Method of manufacturing semiconductor device using electron beam
JPS58199567A (ja) * 1982-05-17 1983-11-19 Toshiba Corp シヨツトキ障壁型電界効果トランジスタ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171A (ja) * 1986-06-19 1988-01-05 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0365893B2 (enExample) 1991-10-15

Similar Documents

Publication Publication Date Title
JPH01500946A (ja) 電界効果トランジスタ用ｔゲート電極およびそれを形成する電界効果トランジスタ
JPS6216534B2 (enExample)
US5970328A (en) Fabrication method of T-shaped gate electrode in semiconductor device
JP2000039717A (ja) レジストパターンの形成方法および半導体装置の製造方法
JPS60220976A (ja) 半導体装置の製造方法
EP0332680B1 (en) Process of forming a t-gate metal structure on a substrate
JP2664736B2 (ja) 半導体装置用電極の形成方法
JPH0365893B2 (enExample)
JP3071481B2 (ja) ＧａＡｓデバイス及びＴ字型ゲート電極の作成方法
JPH03119720A (ja) リフトオフ加工用ホトレジスト、リフトオフ加工用ホトレジストのパターン形成方法及びリフトオフ方法
JP2624157B2 (ja) 電界効果トランジスタの製造方法
JPS62250674A (ja) 半導体装置の製造方法
JP2714026B2 (ja) 半導体装置用電極の形成方法
KR100564746B1 (ko) 화합물 반도체 소자의 티형 게이트 제조 방법
JP2962262B2 (ja) 微細ゲート電極の形成方法
JP2776053B2 (ja) 半導体装置の製造方法
JP3147843B2 (ja) 電界効果型半導体装置の製造方法
JPH02273939A (ja) 電界効果型半導体装置の製造方法
JP2831774B2 (ja) 半導体装置の製造方法
JPS6390171A (ja) 電界効果トランジスタの製造方法
JP3591155B2 (ja) 電極の形成方法
JPH0638431B2 (ja) 半導体装置の製造方法
JPH0653246A (ja) 電界効果トランジスタの製法
JPH0371643A (ja) 半導体装置の製造方法
JPH05335339A (ja) Ｔ字型ゲート電極の形成方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees