JPH0365668B2 - - Google Patents
Info
- Publication number
- JPH0365668B2 JPH0365668B2 JP20018681A JP20018681A JPH0365668B2 JP H0365668 B2 JPH0365668 B2 JP H0365668B2 JP 20018681 A JP20018681 A JP 20018681A JP 20018681 A JP20018681 A JP 20018681A JP H0365668 B2 JPH0365668 B2 JP H0365668B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- etching
- etched
- inp
- mesa structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 6
- 125000005842 heteroatom Chemical group 0.000 description 4
- 238000005253 cladding Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20018681A JPS58102584A (ja) | 1981-12-14 | 1981-12-14 | 半導体の加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20018681A JPS58102584A (ja) | 1981-12-14 | 1981-12-14 | 半導体の加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58102584A JPS58102584A (ja) | 1983-06-18 |
| JPH0365668B2 true JPH0365668B2 (enrdf_load_html_response) | 1991-10-14 |
Family
ID=16420220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20018681A Granted JPS58102584A (ja) | 1981-12-14 | 1981-12-14 | 半導体の加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102584A (enrdf_load_html_response) |
-
1981
- 1981-12-14 JP JP20018681A patent/JPS58102584A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58102584A (ja) | 1983-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2026289A1 (en) | Method of manufacturing semiconductor laser | |
| US4599787A (en) | Method of manufacturing a light emitting semiconductor device | |
| EP0412582B1 (en) | A semiconductor laser | |
| JPH0365668B2 (enrdf_load_html_response) | ||
| JPS6237911B2 (enrdf_load_html_response) | ||
| GB2062949A (en) | Single filament semiconductor laser with large emitting area | |
| JPS6187385A (ja) | 埋め込み構造半導体レ−ザ | |
| JPS6223191A (ja) | リツジ型半導体レ−ザ装置の製造方法 | |
| JPS58201383A (ja) | 半導体発光装置 | |
| JPS60261184A (ja) | 半導体レ−ザ装置およびその製造方法 | |
| JPH0665237B2 (ja) | 二次元量子化素子の製造方法 | |
| JPS62166586A (ja) | 半導体発光素子とその製造方法 | |
| JPS6430287A (en) | Semiconductor laser device and manufacture thereof | |
| JPS60147119A (ja) | 半導体素子の製造方法 | |
| JP2736382B2 (ja) | 埋め込み型半導体レーザおよびその製造方法 | |
| JPS6281782A (ja) | 半導体発光装置 | |
| JP2525617B2 (ja) | 半導体レ−ザの製造方法 | |
| JPH07120832B2 (ja) | 半導体レ−ザ装置 | |
| JP2547459B2 (ja) | 半導体レーザ素子及びその製造方法 | |
| JPH01185988A (ja) | 半導体発光素子及びその製造方法 | |
| JPH046889A (ja) | 半導体レーザ装置 | |
| JPS6214116B2 (enrdf_load_html_response) | ||
| JPH0680861B2 (ja) | 半導体発光装置の製造方法 | |
| JPS62144380A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPS5925398B2 (ja) | 半導体レ−ザの製造方法 |