JPH0363819B2 - - Google Patents
Info
- Publication number
- JPH0363819B2 JPH0363819B2 JP59154812A JP15481284A JPH0363819B2 JP H0363819 B2 JPH0363819 B2 JP H0363819B2 JP 59154812 A JP59154812 A JP 59154812A JP 15481284 A JP15481284 A JP 15481284A JP H0363819 B2 JPH0363819 B2 JP H0363819B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- fuse
- insulating film
- opening
- connection hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 40
- 239000010410 layer Substances 0.000 claims description 28
- 239000011229 interlayer Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 238000007664 blowing Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 230000002950 deficient Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15481284A JPS6132551A (ja) | 1984-07-25 | 1984-07-25 | 半導体ヒユ−ズ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15481284A JPS6132551A (ja) | 1984-07-25 | 1984-07-25 | 半導体ヒユ−ズ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6132551A JPS6132551A (ja) | 1986-02-15 |
| JPH0363819B2 true JPH0363819B2 (de) | 1991-10-02 |
Family
ID=15592413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15481284A Granted JPS6132551A (ja) | 1984-07-25 | 1984-07-25 | 半導体ヒユ−ズ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6132551A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6139550A (ja) * | 1984-07-31 | 1986-02-25 | Nec Corp | 半導体ヒユ−ズ素子 |
| JPH074973U (ja) * | 1993-06-18 | 1995-01-24 | 株式会社清水合金製作所 | 空気弁 |
| JP2007081152A (ja) * | 2005-09-14 | 2007-03-29 | Renesas Technology Corp | 半導体装置 |
-
1984
- 1984-07-25 JP JP15481284A patent/JPS6132551A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6132551A (ja) | 1986-02-15 |
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