JPH0361276B2 - - Google Patents
Info
- Publication number
- JPH0361276B2 JPH0361276B2 JP1516482A JP1516482A JPH0361276B2 JP H0361276 B2 JPH0361276 B2 JP H0361276B2 JP 1516482 A JP1516482 A JP 1516482A JP 1516482 A JP1516482 A JP 1516482A JP H0361276 B2 JPH0361276 B2 JP H0361276B2
- Authority
- JP
- Japan
- Prior art keywords
- shift register
- input
- memory cell
- shift
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000002457 bidirectional effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
Landscapes
- Static Random-Access Memory (AREA)
- Memory System (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57015164A JPS58133698A (ja) | 1982-02-02 | 1982-02-02 | 半導体メモリ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57015164A JPS58133698A (ja) | 1982-02-02 | 1982-02-02 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58133698A JPS58133698A (ja) | 1983-08-09 |
JPH0361276B2 true JPH0361276B2 (en, 2012) | 1991-09-19 |
Family
ID=11881156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57015164A Granted JPS58133698A (ja) | 1982-02-02 | 1982-02-02 | 半導体メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58133698A (en, 2012) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4649516A (en) * | 1984-06-01 | 1987-03-10 | International Business Machines Corp. | Dynamic row buffer circuit for DRAM |
JPS61117789A (ja) * | 1984-11-13 | 1986-06-05 | Nec Corp | 半導体メモリ |
US4796222A (en) * | 1985-10-28 | 1989-01-03 | International Business Machines Corporation | Memory structure for nonsequential storage of block bytes in multi-bit chips |
JPS62252590A (ja) * | 1986-04-24 | 1987-11-04 | Ascii Corp | メモリ装置 |
CA1293565C (en) * | 1986-04-28 | 1991-12-24 | Norio Ebihara | Semiconductor memory |
JPH07101551B2 (ja) * | 1986-05-06 | 1995-11-01 | ソニー株式会社 | 映像記憶装置 |
JPS62271291A (ja) * | 1986-05-20 | 1987-11-25 | Ascii Corp | メモリ装置 |
JP2728395B2 (ja) * | 1986-09-26 | 1998-03-18 | 株式会社日立製作所 | 半導体記憶装置 |
JPH01213889A (ja) * | 1987-05-27 | 1989-08-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS63311697A (ja) * | 1987-06-15 | 1988-12-20 | Hitachi Ltd | 半導体記憶装置 |
JPH02172097A (ja) * | 1988-12-23 | 1990-07-03 | Nec Corp | メモリ |
JPH0743928B2 (ja) * | 1989-09-22 | 1995-05-15 | 株式会社東芝 | 画像メモリ |
JPH07122988B2 (ja) * | 1993-07-30 | 1995-12-25 | 沖電気工業株式会社 | 半導体記憶回路 |
-
1982
- 1982-02-02 JP JP57015164A patent/JPS58133698A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58133698A (ja) | 1983-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5463591A (en) | Dual port memory having a plurality of memory cell arrays for a high-speed operation | |
JP2683919B2 (ja) | 半導体記憶装置 | |
US4773049A (en) | Semiconductor memory device having improved access time for continuously accessing data | |
JPH0361276B2 (en, 2012) | ||
JP2591010B2 (ja) | シリアルアクセスメモリ装置 | |
KR960012002A (ko) | 반도체 메모리와 그 사용방법, 컬럼 디코더 및 화상 프로세서 | |
JPH09204789A (ja) | 半導体記憶装置 | |
GB1573661A (en) | Digital logic circuit | |
JPH04306756A (ja) | データ転送システム | |
US4277836A (en) | Composite random access memory providing direct and auxiliary memory access | |
JPH0263273B2 (en, 2012) | ||
US4841567A (en) | Memory device | |
JPS5856173B2 (ja) | マトリツクスアレ−ヨウ センタクソウチ | |
JPH0644394B2 (ja) | 半導体記憶装置 | |
JP2786020B2 (ja) | 半導体メモリ装置 | |
JP2590701B2 (ja) | 半導体記憶装置 | |
JP2680475B2 (ja) | 半導体メモリ装置 | |
JP3183167B2 (ja) | 半導体記憶装置 | |
KR100546297B1 (ko) | 반도체 집적회로 | |
JPS6222291A (ja) | 半導体記憶装置 | |
JP2824976B2 (ja) | 2次元配列データ回転装置 | |
JP2591448B2 (ja) | セレクタ回路およびマルチポートメモリセル | |
JP3160930B2 (ja) | 半導体記憶装置の読み出し回路 | |
JPS5930295A (ja) | 半導体メモリのアクセス方式 | |
JPH0227759B2 (en, 2012) |